Results 101 to 110 of about 2,381 (268)

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

, 2012
High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.
Bhansali, Unnat Sampatraj, J. A. Caraveo-Frescas, Nayak, Pradipta K., H. N. Alshareef, Alshareef, Husam N., Pradipta K. Nayak, Unnat. S. Bhansali, Caraveo-Frescas, Jesus Alfonso   +7 more
core   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires

Nature Communications
Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter.
Jinlei Zhang, Jiayong Zhang, Yaping Qi, Shuainan Gong, Hang Xu, Zhenqi Liu, Ran Zhang, Mohammad A. Sadi, Demid Sychev, Run Zhao, Hongbin Yang, Zhenping Wu, Dapeng Cui, Lin Wang, Chunlan Ma, Xiaoshan Wu, Ju Gao, Yong P. Chen, Xinran Wang, Yucheng Jiang   +19 more
doaj   +1 more source

Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor

IEEE Journal of the Electron Devices Society
We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE)
Su Yeon Jung, Hyunwoo Kim, Jongmin Lee, Jang Hyun Kim   +3 more
doaj   +1 more source

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In₂Se₃ for stacked in-memory computing array. [PDF]

Nat Commun, 2023
Park S, Lee D, Kang J, Choi H, Park JH.
europepmc   +1 more source

A ferroelectric transparent thin-film transistor [PDF]

, 1996
Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator.
Grosse-Holz, K.-O., Weening, R.P., Weening, RP, Giesbers, J. B., R. M. Wolf, Grosse-Holz, K. O., R. P. Weening, J. F. M. Cillessen, Cillessen, J.F.M., Wolf, R.M., G. Müller, M. W. J. Prins, Prins, M.W.J., Giesbers, J.B., Prins, M. W. J., Cillessen, J. F. M., Cillessen, JFM, Weening, R. P., Wolf, R. M., Grosse-Holz, K-O, Wolf, RM, Müller, G, Giesbers, Jacobus B, J. B. Giesbers, Prins, MWJ Menno, K.-O. Grosse-Holz, Müller, G.   +26 more
core   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source