Results 111 to 120 of about 15,744,163 (247)
A Van Der Waals Ferroelectric Schottky Junction Field-effect Transistor
Two-dimensional ferroelectric field-effect transistors hold great promise for next-generation electronics due to their scalability, low power operation, and non-volatile memory capabilities.
Zou, Lingrui +6 more
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, 1997 We report the first demonstration of an enhancement mode n-channel metal -ferroelectric-semiconductor field effect transistor (MFISFET) realized directly on silicon with yttrium oxide as the buffer layer.
Yong-Tae Kim +2 more
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In‐Depth Atomic Mapping of Polarization Switching in a Ferroelectric Field‐Effect Transistor
, 2020 The ferroelectric control of a Mott transistor is a promising strategy for nonvolatile low-power electronics. Understanding the fundamental limits of the ferroelectric-field effect is challenging, as the relevant length scales are restricted to a few ...
Vistoli, Lorenzo +15 more
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Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing
Advanced Science, EarlyView.A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh +7 more
wiley +1 more source
Advanced Science, EarlyView.HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Ferroelectric Catalysts in the Hydrogen Evolution Reaction: A Perspective
Advanced Science, EarlyView.This perspective summarizes recent advances in ferroelectric (FE) catalysts for the hydrogen evolution reaction (HER). It first introduces HER fundamentals and FE mechanisms, then classifies FE catalysts into single‐phase, single‐atom‐modified, heterostructured, and other engineered types, with representative examples.
Rongxuan Lu +6 more
wiley +1 more source
Neuromorphic Devices and Computing for Sensing, Memory, and Control
Advanced Science, EarlyView.This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu +2 more
wiley +1 more source
Advanced Science, EarlyView.As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee +3 more
wiley +1 more source
Probabilistic Computing via Gate‐Tunable Random Telegraph Noise
Advanced Science, EarlyView.Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun +8 more
wiley +1 more source
Self-Selective Non-Volatile Ferroelectric Memory Realized with Graphene Field Effect Transistor
, 2020 We experimentally demonstrated a new concept of non-destructive read-out process using transconductance measurements for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor ...
Jung, Sungchul +8 more
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