Results 121 to 130 of about 2,381 (268)
Polarization Modulation in Ferroelectric Organic Field-Effect Transistors
, 2018 The polarization modulation effect of the gate dielectric on the performance of metal-oxide-semiconductor field-effect transistors has been investigated for more than a decade.
Muller, T. +8 more
core +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram +10 more
wiley +1 more source
Infrared light gated MoS2 field effect transistor
, 2015 Molybdenum disulfide (MoS2) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties.
Wang, X +10 more
core +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Morphotropic Phase Boundary Engineering via Heterostructure for Low‐Voltage Ferroelectric Capacitors
Advanced Electronic Materials, EarlyView.Morphotropic phase boundary engineering in HfxZr1‐xO2 heterostructures enables low‐voltage and fast ferroelectric switching. This layer promotes polarization switching near 0 V, resulting in ≈25% reduction in coercive voltage and enhanced capacitance. This heterostructure design provides a practical route for energy‐efficient ferroelectric capacitors ...
Changhyeon Han +7 more
wiley +1 more source
Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
, 2019 With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low ...
Din-Ping Tsai +17 more
core +1 more source
Advanced Intelligent Discovery, EarlyView.Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz +4 more
wiley +1 more source
Switching Characteristics of Ferroelectric Transistor Inverters
, 2010 This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise ...
Ho, Fat D. +3 more
core
Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Advanced Intelligent Discovery, EarlyView.Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source