Results 131 to 140 of about 15,744,163 (247)

Switching Characteristics of Ferroelectric Transistor Inverters [PDF]

, 2010
This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise ...
Ho, Fat D., MacLeod, Todd C., Laws, Crystal, Mitchell, Coey   +3 more
core  

Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing

Advanced Electronic Materials, EarlyView.
By integrating experiments and electrostatic field simulations, we show that long‐range wireless coupling in Li‐based ferroionics devices emerges from the cooperative interaction between ionic migration and electronic polarization. This coupling sustains self‐polarized electrostatic fields across centimeter‐scale air gaps without external bias or ...
M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro   +7 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Top-down nanofabrication of silicon nanoribbon field effect transistor (Si-NR FET) for carcinoembryonic antigen detection

, 2017
Zengtao Bao,1,* Jialin Sun,2,* Xiaoqian Zhao,2 Zengyao Li,2 Songkui Cui,2 Qingyang Meng,2 Ye Zhang,2 Tong Wang,2 Yanfeng Jiang3 1Department of Gastrointestinal Surgery, Lianyungang First People’s Hospital, Affiliated Hospital of the Clinical ...
Jiang Y, Li Z, Bao Z, Meng Q, Zhang Y, Wang T, Cui S, Sun J, Zhao X   +8 more
core  

Incorporation of Extrinsic Alkali Cations Modulates Ion Migration and Hysteresis in Lateral MAPbBr3 Devices

Advanced Electronic Materials, EarlyView.
Extrinsic alkali cations regulate field‐driven ion migration and hysteresis in lateral MAPbBr3 devices. Combined electrical measurements and DFT calculations reveal distinct ion‐dependent transport behaviors, with Li+ producing the strongest modulation due to its lower migration barrier.
Hongxin Yuan, Yahong Pu, Darrell Jun Jie Tay, Si En Ng Timothy, Yanfang Zhang, Chenguang Zhang, Teddy Salim, Natalia Yantara, Shixuan Du, Nripan Mathews, Kedar Hippalgaonkar   +10 more
wiley   +1 more source