Results 131 to 140 of about 2,381 (268)

Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications

IEEE Journal of the Electron Devices Society
Ferroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel ...
Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim   +5 more
doaj   +1 more source

Ferroelectric-gate carbon nanotube field effect transistor for non-volatile memory application

, 2014
Carbon nanotube field effect transistor has attracted much attention and is a promising candidate for next generation nanoelectronics. Significant hysteresis usually exists in its transfer characteristics between the forward and reverse gate bias sweeps,
Cheah, Jason Jun Wei
core  

Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley   +1 more source

Graphene field - effect transistors on ferroelectric substrates

, 2016
The channel mobility in graphene field-effect transistors (G-FETs) is usually strongly degraded by Coulomb scattering caused by charged impurities. Additional issue is the zero-bandgap in monolayer graphene, which limits the power gain of the G-FETs. The both issues can be effectively addressed by using ferroelectric as a G-FET substrate [1,2]. We show
Vorobiev, Andrei, Bidmeshkipour, Samina, ANDERSSON, MICHAEL, Kompany, Ahmad, Stake, Jan   +4 more
openaire   +1 more source

N -type behavior of ferroelectric-gate carbon nanotube network transistor

, 2008
Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ...
Jun Wei Cheah, Li, Lain-Jong, Lee, Chun Wei, Wang, Junling, Ong, Hock Guan, Junling Wang, Yumeng Shi, Hock Guan Ong, Chun Wei Lee, Cheah, Jun Wei, Lain-Jong Li, Shi, Yumeng, Li, Lain Jong   +12 more
core   +1 more source

Hardware‐Based On‐Chip Learning Using a Ferroelectric AND‐Type Array With Random Synaptic Weights

Advanced Intelligent Systems, EarlyView.
This work demonstrates an energy‐efficient on‐chip learning system using an Metal‐Ferroelectric‐Insulator‐Semiconductor FeAND synaptic array. By employing a feedback alignment scheme with a separate backward array using fixed random weights, the system overcomes directional limitations of AND‐type arrays and achieves robust, low‐power learning suitable
Minsuk Song, Changhyeon Han, Joonhyeok Choi, Jongwoo Lee, Hyun‐min Kim, Wongi Hong, Ujin Kim, Sung‐Tae Lee, Daewoong Kwon   +8 more
wiley   +1 more source

Characteristics of sub-100nm Ferroelectric Field Effect Transistor with High-k Buffer Layer

, 2008
The simulation work is carried out using two dimension device simulator to investigate the characteristics of sub-100nm ferroelectric field effect transistor (FeFET) with high-k material as the buffer layer.
Kang, Jinfeng, Honghua Xu, Yuncheng Song, Rui Jin, Song, Yuncheng, Ji, Min, Jinfeng Kang, Min Ji, Ruqi Han, Jin, Rui, Han, Ruqi, Liu, Xiaoyan, Xu, Honghua, Xiaoyan Liu   +13 more
core   +1 more source

Thermally Stable Organic Synaptic Transistors Using a High‐Tg Polymer Electret

Advanced Intelligent Systems, EarlyView.
A high–glass‐transition‐temperature cyclic olefin copolymer (COC) electret enables thermally stable organic synaptic transistors for neuromorphic operation in harsh environments. UV–ozone treatment increases the trap density in COC, providing robust multilevel conductance and key synaptic functions (excitatory postsynaptic current/ inhibitory ...
Hoyoung Cho, Bombi Kim, Kyoungeun Lee, Moohyun Kim, Chaegwang Lim, Yeyun Bae, Jaeyeop Lee, Jiyoon Oh, Hyeok Kim, Jeongkyun Roh   +9 more
wiley   +1 more source

A Neuromorphic Simulation Framework for Indium‐Gallium‐Zinc‐Oxide Charge‐Trap Synaptic Transistors: From Device Modeling to System Simulation

Advanced Intelligent Systems, EarlyView.
This work presents a comprehensive framework bridging device fabrication, modeling, and system‐level simulation for an indium‐gallium‐zinc‐oxide (IGZO) charge‐trap synaptic transistor‐based neuromorphic system. By developing a precise SPICE model derived from fabricated IGZO synaptic transistors, the study incorporates parasitic RC loads into array ...
Yumin Yun, Junhyeong Park, Sunyeol Bae, Chae‐Hwan Park, Dong Hyeon Lee, Soo‐Yeon Lee   +5 more
wiley   +1 more source

Improved program mode for memory array based on ferroelectric-gate field-effect transistor

, 2006
An improved program mode for memory array based on ferroelectric field effect transistor (Fe-FET) is proposed. A SPICE macro-model for the transfer characteristics of Fe-FET devices, based on the Schmitt trigger circuit, is demonstrated and applied to ...
Kang, J.F., Du, G., R.q. Han, Y.y. Wang, Wang, Y.Y., T. Ma, Liu, X.Y., W.f. Li, Ma, T.P., G. Du, Li, W.F., X.y. Liu, J.f. Kang, Han, R.Q.   +13 more
core   +1 more source