Results 91 to 100 of about 2,381 (268)
Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review
Advanced Science, EarlyView.Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh +8 more
wiley +1 more source
Advanced Science, EarlyView.This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan +11 more
wiley +1 more source
Processing organic semiconductors
, 2010 PhDIn recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light ...
Baklar, Mohammed Adnan
core
A Van Der Waals Ferroelectric Schottky Junction Field-effect Transistor
Two-dimensional ferroelectric field-effect transistors hold great promise for next-generation electronics due to their scalability, low power operation, and non-volatile memory capabilities.
Zou, Lingrui +6 more
core +1 more source
Ferroelectric Field Effect Device
, 2002 A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF ...
R. Ramesh +3 more
core +1 more source
Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
, 2023 In this work, we explored the potential of the ferroelectric gate of (Pb0.92La0.08)(Zr0.30Ti0.70)O3 (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices.
Lvkang Shen +4 more
core +1 more source
Advanced Science, EarlyView.Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong +10 more
wiley +1 more source
Advanced Electronic MaterialsCompact in‐memory computing architectures are desirable to embed artificial intelligence (AI) in resource‐restricted edge devices. However, current technologies face limitations in both the area and energy efficiency. Here, a reconfigurable ferroelectric
Zhongyunshen Zhu +2 more
doaj +1 more source
Nanoscale Research Letters, 2019 We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM ...
Yue Peng +6 more
doaj +1 more source
Self-Selective Non-Volatile Ferroelectric Memory Realized with Graphene Field Effect Transistor
, 2020 We experimentally demonstrated a new concept of non-destructive read-out process using transconductance measurements for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor ...
Jung, Sungchul +8 more
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