Results 41 to 50 of about 2,381 (268)

Ferroelectric Field Effect Transistors Based on PZT and IGZO

IEEE Journal of the Electron Devices Society, 2019
Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized.
Cristina Besleaga, Roxana Radu, Liliana-Marinela Balescu, Viorica Stancu, Andreea Costas, Viorel Dumitru, George Stan, Lucian Pintilie   +7 more
doaj   +1 more source

Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors

Materials Research Express, 2021
In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET ...
Y G Xiao, K C Kang, L Y Tian, K Xiong, G Li, M H Tang, Z Li   +6 more
doaj   +1 more source

Ferroelectric Negative Capacitance Field Effect Transistor

Advanced Electronic Materials, 2018
AbstractWith the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit.
Luqi Tu, Xudong Wang, Jianlu Wang, Xiangjian Meng, Junhao Chu   +4 more
openaire   +1 more source

Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method [PDF]

, 2008
We investigated the reading and writing of ferroelectric-gate field-effect transistor memory with an intermediate electrode (IF-FET) to achieve perfect nondestructive readouts.
Trinh, Bui Nguyen Quoc, Horita, Susumu
core   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

Advanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo, Artur Ciesielski, Paolo Samorì   +2 more
wiley   +1 more source

Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

IEEE Journal of the Electron Devices Society, 2022
The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on ...
Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon   +4 more
doaj   +1 more source

An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

, 2014
We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of ...
Nysten, Bernard, Hu, Zhijun, Jonas, Alain M, Kassa, H.G., Marrani, A., Marrani, Alessio, Kassa, Hailu G, Breemen, A.J.J.M. van, van Breemen, Albert J. J. M., Gelinck, G.H., Jonas, A.M., Gelinck, G Gerwin, van Breemen, AJJM, Cai, Ronggang, Gelinck, Gerwin H., Kassa, Hailu Gebru, Hu, Z., Cai, R., Nysten, B., Jonas, Alain M.   +19 more
core   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

Advanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo, Sangyong Park, Yoonyi Jeong, Jaepyo Jang, Duhwan Seong, In Soo Kim, Myung‐Gil Kim, Mikyung Shin, Minah Suh, Donghee Son, Jin‐Hong Park   +10 more
wiley   +1 more source

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Nano Convergence, 2018
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope.
Eunah Ko, Jaemin Shin, Changhwan Shin
doaj   +1 more source

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Nanoscale Research Letters, 2020
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance.
Siqing Zhang, Yan Liu, Jiuren Zhou, Meng Ma, Anyuan Gao, Binjie Zheng, Lingfei Li, Xin Su, Genquan Han, Jincheng Zhang, Yi Shi, Xiaomu Wang, Yue Hao   +12 more
doaj   +1 more source