Results 41 to 50 of about 15,744,163 (247)

An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

, 2014
We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of ...
Kassa, H.G., Marrani, A., Hu, Z., Cai, R., Breemen, A.J.J.M. van, Nysten, B., Gelinck, G.H., Jonas, A.M.   +7 more
core   +2 more sources

Spike-Timing Dependent Learning Dynamics in Silicon-Doped Hafnium-Oxide-Based Ferroelectric Field Effect Transistors

IEEE Journal of the Electron Devices Society
Brain-inspired computing, with its potential for energy-efficient spatio-temporal data processing, has spurred significant interest in spiking neural networks and their hardware implementations. Leveraging their non-volatile memory and analog tunability,
Masud Rana Sk, Apu Das, Gautham Kumar, Deepanshi Bhatnagar, Sourodeep Roy, Yannick Raffel, Maximilian Lederer, Konrad Seidel, Sourav De, Bhaswar Chakrabarti   +9 more
doaj   +1 more source

Ferroelectric Relaxation Oscillators and Spiking Neurons

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
We report the experimental demonstration of the ferroelectric field-effect transistor (FEFET)-based relaxation oscillators and spiking neurons. The ferroelectric relaxation oscillators and the ferroelectric spiking neurons, harnessing the abrupt ...
Zheng Wang, Asif I. Khan
doaj   +1 more source

A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric

Solids, 2023
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the ...
Paul Jacob, Pooja C. Patil, Shan Deng, Kai Ni, Khushwant Sehra, Mridula Gupta, Manoj Saxena, David MacMahon, Santosh Kurinec   +8 more
doaj   +1 more source

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

Advanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin, Long‐Qing Chen, Dean R. Evans, Venkatraman Gopalan   +5 more
wiley   +1 more source

Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

IEEE Journal of the Electron Devices Society, 2017
The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the ...
Eunah Ko, Hyunjae Lee, Youngin Goh, Sanghun Jeon, Changhwan Shin   +4 more
doaj   +1 more source

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source

Ferroelectric Field Effect Transistors Based on PZT and IGZO

IEEE Journal of the Electron Devices Society, 2019
Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized.
Cristina Besleaga, Roxana Radu, Liliana-Marinela Balescu, Viorica Stancu, Andreea Costas, Viorel Dumitru, George Stan, Lucian Pintilie   +7 more
doaj   +1 more source

Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

Advanced Physics Research, 2023
Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power.
David Lehninger, Aditya Prabhu, Ayse Sünbül, Tarek Ali, Fred Schöne, Thomas Kämpfe, Kati Biedermann, Lisa Roy, Konrad Seidel, Maximilian Lederer, Lukas M. Eng   +10 more
doaj   +1 more source

Ferroelectric-gate field effect transistor memories: device physics and applications

, 2016
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
Sakai, Shigeki, Park, Byung-Eun, Okuyama, Masanori, Ishiwara, Hiroshi, Yoon, Sung-Min   +4 more
core   +1 more source