Results 21 to 30 of about 15,744,163 (247)

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

open access: yesInfoMat, 2022
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials
Yu‐Ting Huang   +6 more
doaj   +1 more source

Processing organic semiconductors [PDF]

open access: yes, 2010
PhDIn recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light ...
Baklar, Mohammed Adnan
core   +4 more sources

Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

open access: yesIET Circuits, Devices and Systems, 2021
Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device.
Apoorva   +3 more
doaj   +1 more source

Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing

open access: yes, 2023
With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects.
Zhongyang Liu   +13 more
core   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

open access: yesIEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin   +3 more
doaj   +1 more source

Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

open access: yesCommunications Physics, 2021
The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here,
Jasper Bizindavyi   +3 more
doaj   +1 more source

Chemical and biochemical sensors based on silicon nanowire field-effect transistor arrays [PDF]

open access: yes, 2014
Field-effect transistors (FETs) made from semiconducting nanowires have great potential as electronic biochemical sensors if they can be integrated as an array in a CMOS-compatible architecture together with microfluidic channels and interfacing ...
Wipf, Mathias
core   +1 more source

An Extended Gate Field Effect Transistor-based (EGFET-based) Urea Microbiosensor Based on Polypyrrole [PDF]

open access: yes, 2021
Here, an extended – gate field effect transistor (EGFET) urea microsensor based on modified polypyrrole (PPy) is reported for the quantitative detection of urea in aqueous solution.
Mustafa, SEN, İpek, Avci, Merve, Oğuz
core   +1 more source

Ferroelectric Field Effect Transistor for Memory and Switch Applications [PDF]

open access: yes, 2011
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid ...
Salvatore, Giovanni Antonio
core   +2 more sources

Field-effect experiments on oxide superconductors thin films [PDF]

open access: yes, 2006
[ITALIANO] Negli ultimi anni la ricerca nell’ambito della fisica dello stato solido ha rivolto grande interesse allo studio delle proprietà dei sistemi fortemente correlati ed in particolare degli ossidi perovskitici dei metalli di transizione.
Prigiobbo, Antonio
core   +1 more source

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