Results 21 to 30 of about 2,381 (268)

Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application

IEEE Journal of the Electron Devices Society, 2020
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu, Zi-You Huang, Jun Ma, Zhi-Wei Zheng, Chun-Hu Cheng   +4 more
doaj   +1 more source

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

InfoMat, 2022
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials
Yu‐Ting Huang, Nian‐Ke Chen, Zhen‐Ze Li, Xue‐Peng Wang, Hong‐Bo Sun, Shengbai Zhang, Xian‐Bin Li   +6 more
doaj   +1 more source

Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing

, 2023
With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects.
Zhongyang Liu, Zhongyang Liu (1863094), Mingjie Li (754176), Mingjie Li, Yingtao Ding (13144818), Xiao Liu, Zhiming Chen, Xiao Liu (65413), Zhifang Liu, Zhifang Liu (439137), Yilin Sun, Yingtao Ding, Yilin Sun (793391), Zhiming Chen (1313025)   +13 more
core   +1 more source

Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

IET Circuits, Devices and Systems, 2021
Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device.
Apoorva, Naveen Kumar, S. Intekhab Amin, Sunny Anand   +3 more
doaj   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

Communications Physics, 2021
The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here,
Jasper Bizindavyi, Anne S. Verhulst, Bart Sorée, William G. Vandenberghe   +3 more
doaj   +1 more source

MoTe2 on ferroelectric single-crystal substrate in the dual-gate field-effect transistor operation

, 2021
© 2021 Korean Physical Society. An exfoliated MoTe2 flake in contact with a ferroelectric single-crystal substrate was studied to examine its charge carrier modulation by neighboring ferroelectric polarization.
Kang, Haeyong, Nahee Park, Tuan Khanh Chau, Suh, Dongseok, Lee, Sang-Goo   +4 more
core   +1 more source

Ferroelectric Field Effect Transistor for Memory and Switch Applications [PDF]

, 2011
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid ...
Salvatore, Giovanni Antonio
core   +1 more source

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

Nano Select, 2021
The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park, Jae‐Gil Lee, Cheol Seong Hwang   +2 more
doaj   +1 more source

Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂

IEEE Journal of the Electron Devices Society, 2022
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric ...
Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu   +7 more
doaj   +1 more source