Results 11 to 20 of about 2,381 (268)
Investigation on the Negative Capacitance Field Effect Transistor with Dual Ferroelectric Region
Crystals, 2022 This paper proposes a new structure of the negative capacitance field effect transistor (NCFET), which features of the dual ferroelectric region (DFR) when compared to the conventional NCFET.
Jia-Fei Yao +7 more
doaj +2 more sources
A Compact Model of Ferroelectric Field-Effect Transistor [PDF]
IEEE Electron Device Letters, 2022 In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET Model (BSIM), a standard SPICE MOSFET model. The FE model, similar to the nucleation-limited-switching model, is based on the statistical multidomain dynamics of FE ...
Chien-Ting Tung +3 more
openaire +3 more sources
AIP Advances, 2018 A phase field method was used to investigate the influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor containing a polycrystalline gate.
W. X. Guo +7 more
doaj +2 more sources
Graphene Field-Effect Transistors with Ferroelectric Gating [PDF]
Physical Review Letters, 2010 Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control it are still absent.
Zheng, Y. +5 more
openaire +3 more sources
Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation
Crystals, 2022 The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as ...
Jing Huang +3 more
doaj +1 more source
Physics of organic ferroelectric field‐effect transistors [PDF]
Journal of Polymer Science Part B: Polymer Physics, 2011 AbstractMost of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field‐effect transistors (FeFET) are especially suitable due to the nondestructive read‐out and low power consumption.
Brondijk, J.J. +3 more
openaire +3 more sources
Van der Waals engineering of ferroelectric heterostructures for long-retention memory
Nature Communications, 2021 The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor ...
Xiaowei Wang +12 more
doaj +1 more source
EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
doaj +1 more source
Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
Memories - Materials, Devices, Circuits and Systems, 2023 In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
Masud Rana Sk +10 more
doaj +1 more source
Ferroelectric Tuning of ZnO Ultraviolet Photodetectors
Nanomaterials, 2022 The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection ...
Haowei Xie +7 more
doaj +1 more source