Results 11 to 20 of about 15,744,163 (247)
Investigation on the Negative Capacitance Field Effect Transistor with Dual Ferroelectric Region
Crystals, 2022 This paper proposes a new structure of the negative capacitance field effect transistor (NCFET), which features of the dual ferroelectric region (DFR) when compared to the conventional NCFET.
Jia-Fei Yao +7 more
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Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Nature Communications, 2023 Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications.
Zhongyunshen Zhu +2 more
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AIP Advances, 2018 A phase field method was used to investigate the influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor containing a polycrystalline gate.
W. X. Guo +7 more
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Low-power edge detection based on ferroelectric field-effect transistor
Nature CommunicationsEdge detection is one of the most essential research hotspots in computer vision and has a wide variety of applications, such as image segmentation, target detection, and other high-level image processing technologies.
Jiajia Chen +16 more
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An Extended Gate Field Effect Transistor (EGFET) pH Microsensor [PDF]
, 2021 Here, an extended – gate field effect transistor (EGFET) pH microsensor was developed for use in fast and sensitive pH measurement applications. The system consisted of two components; a pH sensitive modified gold electrode and a simple and cheap metal ...
İpek , Avcı +2 more
core +1 more source
EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
doaj +1 more source
Physics of organic ferroelectric field‐effect transistors [PDF]
Journal of Polymer Science Part B: Polymer Physics, 2011 AbstractMost of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field‐effect transistors (FeFET) are especially suitable due to the nondestructive read‐out and low power consumption.
Brondijk, J.J. +3 more
openaire +3 more sources
Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
Memories - Materials, Devices, Circuits and Systems, 2023 In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
Masud Rana Sk +10 more
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IEEE Journal of the Electron Devices Society, 2020 In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu +4 more
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Ferroelectric Tuning of ZnO Ultraviolet Photodetectors
Nanomaterials, 2022 The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection ...
Haowei Xie +7 more
doaj +1 more source