Results 71 to 80 of about 751 (187)

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology

, 2021
Logic-in-memory circuits promise to overcome the von-Neumann bottleneck, which constitutes one of the limiting factors to data throughput and power consumption of electronic devices.
Mikolajick, T., Breyer, E. T., Slesazeck, S., Mulaosmanovic, H.   +3 more
core   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Analysis and Design of FeFET Synapse With Stacked-Nanosheet Architecture Considering Cycle-to-Cycle Variations for Neuromorphic Applications

IEEE Open Journal of Nanotechnology
Using extensive Monte-Carlo simulations with a nucleation-limited-switching (NLS) ferroelectric model and considering cycle-to-cycle variations, this paper constructs and analyzes the intrinsic conductance (GDS) response of stacked-nanosheet FeFET ...
Heng Li Lin, Pin Su
doaj   +1 more source

A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage

, 2022
S.665-668We report 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers. Memory window up to 3.5V, switching speed of 300ns, 10 years retention, and 10 4 endurance are reported. The gate stack
Steinke, P., Polakowski, P., Zimmermann, K., Kämpfe, T., Pätzold, B., Mühle, U., Olivo, R., Czernohorsky, M., Ali, T., Hoffmann, R., Müller, F., Lederer, M., Seidel, K., Lehninger, D., Rudolph, M., Müller, J., Kühnel, K.   +16 more
core   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Impact of Stack Structure Control and Ferroelectric Material Optimization in Novel Laminate HSO and HZO MFMIS FeFET

, 2022
8384We report ferroelectric (FE) laminate HSO/HZO MFMIS FeFETs. An MFM/MIS area ratio control enables low voltage operation and 105 endurance. FE lamination (2 × 10 nm, 4 × 5 nm) and low FE anneal reduce the FeFET variability. Impact of the stack (MFMIS),
Kühnel, Kati, Lehninger, David, Revello Olivo, Ricardo Orlando, Ali, Tarek Nadi Ismail, Schramm, Philipp, Müller, Franz, Kämpfe, Thomas, Rudolph, Matthias, Lederer, Maximilian, Hoffmann, Raik, Seidel, Konrad, Oehler, Sebastian, Czernohorsky, Malte, Mertens, K.   +13 more
core   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Substrate-voltage-controlled temporal nonlinearity in ferroelectric FET-based reservoir computing [PDF]

APL Machine Learning
Physical reservoir computing exploits inherent nonlinearity and short-term memory of physical dynamics to achieve efficient processing of time-series data with extremely-low training cost.
Eishin Nako, Ryosho Nakane, Mitsuru Takenaka, Kasidit Toprasertpong, Shinichi Takagi   +4 more
doaj   +1 more source

A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation

, 2022
S.2793-2799We report on the temperature-dependent operation of fluorite-structure-based ferroelectric FET (FeFET) emerging memory. A temperature range (-40 °C to 40 °C) is used to explore the FeFET characteristic relation to operating temperature.
Mart, C., Metzger, J., Steinke, P., Eng, L.M., Pätzold, B., Kämpfe, T., Olivo, R., Czernohorsky, M., Ali, T., Müller, F., Hoffmann, R., Lederer, M., Lehninger, D., Seidel, K., Rudolph, M., Müller, J., Kühnel, K., Binder, R.   +17 more
core   +1 more source