Results 91 to 100 of about 751 (187)
Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect
In this work, a leaky-Ferroelectric Field Effect Transistor (FeFET) neuron is introduced as a physical reservoir in a reservoir computing scheme. Compared to a conventional FeFET reservoir control sample, which did not show leaky behavior, the proposed ...
Kang, Changyeon +5 more
core +1 more source
, 2022 9 S.The impact of the ferroelectric (FE) wakeup phenomenon on the reliability of fluorite structure-based laminated Si-doped hafnium oxide (HSO) FeFET memory cells is reported.
Mart, C. +18 more
core +1 more source
Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
, 2022 S.2981-2987We report on the high-temperature operation and reliability of the Si-doped hafnium oxide (HSO) ferroelectric FET (FeFET) emerging memory. In this study, we explore the role of high-temperature operation of the ferroelectric (FE) material on ...
Mart, C. +17 more
core +1 more source
Analog content-addressable memory from complementary FeFETs
DeviceTo address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive ...
Xiwen Liu +8 more
openaire +3 more sources
Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Advanced Intelligent Discovery, EarlyView.Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source
Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing
Advanced Electronic MaterialsWhile n‐FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the ...
Sheng‐Yen Zheng +3 more
doaj +1 more source
Hardware‐Based On‐Chip Learning Using a Ferroelectric AND‐Type Array With Random Synaptic Weights
Advanced Intelligent Systems, EarlyView.This work demonstrates an energy‐efficient on‐chip learning system using an Metal‐Ferroelectric‐Insulator‐Semiconductor FeAND synaptic array. By employing a feedback alignment scheme with a separate backward array using fixed random weights, the system overcomes directional limitations of AND‐type arrays and achieves robust, low‐power learning suitable
Minsuk Song +8 more
wiley +1 more source
Scientific ReportsHafnium oxide-based ferroelectrics, particularly zirconium-doped HfO2 (HZO), have demonstrated excellent compatibility with CMOS fabrication processes. However, the impact of post-metallization annealing (PMA)—a key step in optimizing device performance ...
Jehyun An +7 more
doaj +1 more source
Advanced Intelligent Systems, EarlyView.This work presents a comprehensive framework bridging device fabrication, modeling, and system‐level simulation for an indium‐gallium‐zinc‐oxide (IGZO) charge‐trap synaptic transistor‐based neuromorphic system. By developing a precise SPICE model derived from fabricated IGZO synaptic transistors, the study incorporates parasitic RC loads into array ...
Yumin Yun +5 more
wiley +1 more source