Results 91 to 100 of about 1,280 (239)

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

Advanced Electronic Materials
While n‐FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the ...
Sheng‐Yen Zheng, Wei‐Ning Kao, Yu‐Hsing Chen, Yung‐Hsien Wu   +3 more
doaj   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect

In this work, a leaky-Ferroelectric Field Effect Transistor (FeFET) neuron is introduced as a physical reservoir in a reservoir computing scheme. Compared to a conventional FeFET reservoir control sample, which did not show leaky behavior, the proposed ...
Kang, Changyeon, Park, Youngkeun, Shin, Eui Joong, Cho, Byung-Jin, Lee, Gyusoup, Kim, Seongho   +5 more
core   +1 more source

Impact of Stack Structure Control and Ferroelectric Material Optimization in Novel Laminate HSO and HZO MFMIS FeFET

, 2022
8384We report ferroelectric (FE) laminate HSO/HZO MFMIS FeFETs. An MFM/MIS area ratio control enables low voltage operation and 105 endurance. FE lamination (2 × 10 nm, 4 × 5 nm) and low FE anneal reduce the FeFET variability. Impact of the stack (MFMIS),
Kühnel, Kati, Lehninger, David, Revello Olivo, Ricardo Orlando, Ali, Tarek Nadi Ismail, Schramm, Philipp, Müller, Franz, Kämpfe, Thomas, Rudolph, Matthias, Lederer, Maximilian, Hoffmann, Raik, Seidel, Konrad, Oehler, Sebastian, Czernohorsky, Malte, Mertens, K.   +13 more
core   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Evaluation of Si:HfO₂ Ferroelectric Properties in MFM and MFIS Structures

IEEE Journal of the Electron Devices Society, 2018
A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped p-Si substrate as would be present in an FeFET, and an n+ Si electrode. The HfO2
Jackson D. Anderson, Jordan Merkel, David Macmahon, Santosh K. Kurinec   +3 more
doaj   +1 more source

Device-Aware Test for Threshold Voltage Shifting in FeFET

2025 IEEE International Test Conference (ITC)
Ferroelectric Field-Effect Transistors (FeFETs) are promising candidates for non-volatile memory (NVM) technologies, especially in embedded systems and edge computing. However, due to their physical characteristics, FeFETs exhibit unique defects—such as Threshold Voltage Shifting (TVS) caused by trap charges in the oxide layer—that are not captured by ...
Wang, Changhao, Kolahimahmoudi, Nima, Bellarmino, Nicolo, Cantoro, Riccardo, Yuan, Sicong, Xun, Hanzhi, Chen, Danyang, Yin, Chujun, Taouil Mottaqiallah, Fieback, Moritz, Li, Xiuyan, Wang, Lin, Li, Chaobo, Hamdioui, Said   +13 more
openaire   +3 more sources

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation

, 2022
S.2793-2799We report on the temperature-dependent operation of fluorite-structure-based ferroelectric FET (FeFET) emerging memory. A temperature range (-40 °C to 40 °C) is used to explore the FeFET characteristic relation to operating temperature.
Mart, C., Metzger, J., Steinke, P., Eng, L.M., Pätzold, B., Kämpfe, T., Olivo, R., Czernohorsky, M., Ali, T., Müller, F., Hoffmann, R., Lederer, M., Lehninger, D., Seidel, K., Rudolph, M., Müller, J., Kühnel, K., Binder, R.   +17 more
core   +1 more source