Results 101 to 110 of about 1,280 (239)

A Ferroelectric FET-Based Processing-in-Memory Architecture for DNN Acceleration

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
This paper presents a ferroelectric FET (FeFET)-based processing-in-memory (PIM) architecture to accelerate the inference of deep neural networks (DNNs).
Yun Long, Daehyun Kim, Edward Lee, Priyabrata Saha, Burhan Ahmad Mudassar, Xueyuan She, Asif Islam Khan, Saibal Mukhopadhyay   +7 more
doaj   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Reconfigurable Ferroelectric Bandpass Filter With Low-Frequency Noise Analysis for Intracardiac Electrogram Monitoring

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Implantable cardioverter defibrillators (ICDs) provide real-time monitoring and immediate defibrillation for life-threatening arrhythmias. However, the intracardiac electrogram (IEGM) acquisition of ICDs faces stringent constraints, including power ...
Jianwei Jia, Zhenge Jia, Omkar Phadke, Yiyu Shi, Shimeng Yu   +4 more
doaj   +1 more source

Defects, Fault Modeling, and Test Development Framework for FeFETs

2024 IEEE International Test Conference (ITC)
As emerging non-volatile memory (NVM) devices, Ferroelectric Field-Effect Transistors (FeFETs) present distinctive opportunities for the design of ultra-dense and low-leakage memory systems. For matured FeFET manufacturing, it is extremely important to have an understanding of manufacturing defects and accurately model them to develop effective test ...
Changhao Wang, Sicong Yuan, Hanzhi Xun, Chaobo Li, Mottaqiallah Taouil, Moritz Fieback, Danyang Chen, Xiuyan Li, Lin Wang 0111, Riccardo Cantoro, Chujun Yin, Said Hamdioui   +11 more
openaire   +3 more sources

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

Charge-based in-memory computing using fabricated FeFET: device-system interaction

Utilizing the Ferroelectric FET (FeFET) technology as a capacitive element in charge-based in-memory computing (IMC) arrays offers multiple advantages over the classical current-based computing, such as reduced read disturbances and negligible static ...
Halid Mulaosmanovic, Hussam Amrouch, Shubham Kumar, Ashik Chalakariyil, Sven Beyer, Simon Thomann, Zijian Zhao, Stefan Dünkel, Kai Ni, Albi Mema, Mahdi Benkhelifa   +10 more
core   +1 more source

Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process

IEEE Journal of the Electron Devices Society
Ferroelectric field-effect transistors (FeFETs) are strong candidates for synaptic devices in neuromorphic and in-memory computing due to their multi-level programmability, non-volatility, and complementary metal-oxide-semiconductor (CMOS) compatibility.
Sayma Nowshin Chowdhury, Alex L. Mazzoni, Xiaohang Zhang, Andreu L. Glasmann, Halid Mulaosmanovic, Stefan Dunkel, Gunda Beernink, Sven Beyer, Sina Najmaei, Sahil Shah   +9 more
doaj   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, Volume 36, Issue 73, 10 September 2026.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Multi-Level Analog Computing-In-Memory FeFET-based Unit Cell for Deep Learning

This paper shows a FeFET-based analog multi-level unit cell for computing-in-memory applications for Deep Neural Networks (DNN). The FeFET-based unit cell performs input-weight multiplication with a Back-End-Of-Line (BEOL) ferro-electric HZO FeFET device
Brea, V. M., Pereira-Rial, Wernersson, Lars Erik, García-Lesta, D., Cabello, D., Dahlberg, Hannes, López, P.   +6 more
core   +1 more source