Results 101 to 110 of about 751 (187)

Evaluation of Si:HfO₂ Ferroelectric Properties in MFM and MFIS Structures

IEEE Journal of the Electron Devices Society, 2018
A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped p-Si substrate as would be present in an FeFET, and an n+ Si electrode. The HfO2
Jackson D. Anderson, Jordan Merkel, David Macmahon, Santosh K. Kurinec   +3 more
doaj   +1 more source

Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28nm FeFET memory arrays

, 2022
S.42-51With the discovery of ferroelectric hafnium oxide (FE-HfO2), the ferroelectric field effect transistor (FeFET), a long-term contender for non-volatile data storage, has finally managed to scale to the 2x nm technology node. Here for the first time,
Flachowsky, S., Mikolajick, T., Polakowski, P., Mueller, S., Paul, J., Slesazeck, S., Müller, J., Henker, S., Smith, E.   +8 more
core   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing

Nature Communications
Physical unclonable functions (PUFs) are of immense potential in authentication scenarios for Internet of Things (IoT) devices. For creditable and lightweight PUF applications, key attributes, including low power, high reconfigurability and large ...
Taixin Li, Xinrui Guo, Franz Müller, Sukhrob Abdulazhanov, Xiaoyang Ma, Hongtao Zhong, Yongpan Liu, Vijaykrishnan Narayanan, Huazhong Yang, Kai Ni, Thomas Kämpfe, Xueqing Li   +11 more
doaj   +1 more source

A Ferroelectric FET-Based Processing-in-Memory Architecture for DNN Acceleration

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
This paper presents a ferroelectric FET (FeFET)-based processing-in-memory (PIM) architecture to accelerate the inference of deep neural networks (DNNs).
Yun Long, Daehyun Kim, Edward Lee, Priyabrata Saha, Burhan Ahmad Mudassar, Xueyuan She, Asif Islam Khan, Saibal Mukhopadhyay   +7 more
doaj   +1 more source

Device-Aware Test for Threshold Voltage Shifting in FeFET

2025 IEEE International Test Conference (ITC)
Ferroelectric Field-Effect Transistors (FeFETs) are promising candidates for non-volatile memory (NVM) technologies, especially in embedded systems and edge computing. However, due to their physical characteristics, FeFETs exhibit unique defects—such as Threshold Voltage Shifting (TVS) caused by trap charges in the oxide layer—that are not captured by ...
Wang, Changhao, Kolahimahmoudi, Nima, Bellarmino, Nicolo, Cantoro, Riccardo, Yuan, Sicong, Xun, Hanzhi, Chen, Danyang, Yin, Chujun, Taouil Mottaqiallah, Fieback, Moritz, Li, Xiuyan, Wang, Lin, Li, Chaobo, Hamdioui, Said   +13 more
openaire   +2 more sources

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

FeSATLock: An Energy Efficient and SAT Attack Resilient Logic Locking Design With FeFET LUT Architecture for Enhanced Hardware Security [PDF]

Boolean satisfiability (SAT) attacks have been proven to be highly effective against logic locking techniques that secure intellectual property (IP). Prior research has improved the output corruptibility and SAT attack resiliency of logic locking, but ...
Birudu, Venu, Rao Kadiyam, Tirumala, Vaddi, Ramesh, Sibai, Fadi N., Japa, Aditya, Gonuguntla, Venkateswarlu   +5 more
core   +1 more source

A visible‐to‐infrared miniaturized indium selenide spectrometer enabled by a gate‐tunable spectral response matrix

InfoScience, EarlyView.
Traditional light‐analyzing tools, known as spectrometers, are typically too bulky and expensive to fit into portable electronics like smartphones or wearables. In this study, we developed a microscopic, high‐performance spectrometer using a material called Indium Selenide combined with smart algorithms to accurately analyze light from the visible to ...
Jing Chen, Zhen‐Hua Wang, Zheng Zhang, Hengji Li, Xiao‐Ming Wu, Tian‐Ling Ren, Hong Liu, Min Jin, Lin Han   +8 more
wiley   +1 more source

Reconfigurable Ferroelectric Bandpass Filter With Low-Frequency Noise Analysis for Intracardiac Electrogram Monitoring

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Implantable cardioverter defibrillators (ICDs) provide real-time monitoring and immediate defibrillation for life-threatening arrhythmias. However, the intracardiac electrogram (IEGM) acquisition of ICDs faces stringent constraints, including power ...
Jianwei Jia, Zhenge Jia, Omkar Phadke, Yiyu Shi, Shimeng Yu   +4 more
doaj   +1 more source