Results 111 to 120 of about 751 (187)

Multi-Level Analog Computing-In-Memory FeFET-based Unit Cell for Deep Learning

This paper shows a FeFET-based analog multi-level unit cell for computing-in-memory applications for Deep Neural Networks (DNN). The FeFET-based unit cell performs input-weight multiplication with a Back-End-Of-Line (BEOL) ferro-electric HZO FeFET device
Brea, V. M., Pereira-Rial, Wernersson, Lars Erik, García-Lesta, D., Cabello, D., Dahlberg, Hannes, López, P.   +6 more
core   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

Advanced Intelligent Systems
Hafnium oxide (HfO2)‐based ferroelectric field effect transistors (FeFETs) revolutionize the emerging nonvolatile memory area, especially with the potential to replace flash memories for several applications.
Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De   +10 more
doaj   +1 more source

Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process

IEEE Journal of the Electron Devices Society
Ferroelectric field-effect transistors (FeFETs) are strong candidates for synaptic devices in neuromorphic and in-memory computing due to their multi-level programmability, non-volatility, and complementary metal-oxide-semiconductor (CMOS) compatibility.
Sayma Nowshin Chowdhury, Alex L. Mazzoni, Xiaohang Zhang, Andreu L. Glasmann, Halid Mulaosmanovic, Stefan Dunkel, Gunda Beernink, Sven Beyer, Sina Najmaei, Sahil Shah   +9 more
doaj   +1 more source

FeFET-Based Analog In-Memory Computing with Inherent Shift-and-Add Capability

In-memory computing (IMC) architecture has emerged as a highly promising approach, enhancing the energy efficiency of multiply-and-accumulate (MAC) operations in deep neural networks (DNNs) by embedding parallel computations directly into memory arrays ...
Yang, Zeyu, Yin, Xunzhao, Qian, Yu, Kämpfe, Thomas, Yan, Zheyu, Cai, Jiahao, Zhou, Min, Zhuo, Cheng, Huang, Qingrong, Ni, Kai   +9 more
core   +1 more source

Defects, Fault Modeling, and Test Development Framework for FeFETs

2024 IEEE International Test Conference (ITC)
As emerging non-volatile memory (NVM) devices, Ferroelectric Field-Effect Transistors (FeFETs) present distinctive opportunities for the design of ultra-dense and low-leakage memory systems. For matured FeFET manufacturing, it is extremely important to have an understanding of manufacturing defects and accurately model them to develop effective test ...
Changhao Wang, Sicong Yuan, Hanzhi Xun, Chaobo Li, Mottaqiallah Taouil, Moritz Fieback, Danyang Chen, Xiuyan Li, Lin Wang 0111, Riccardo Cantoro, Chujun Yin, Said Hamdioui   +11 more
openaire   +2 more sources

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

jerry-chandler/Nature-Communications-FeFET-CiM-Annealer: Nature-Communications-FeFET-CiM-Annealer

No description ...
jerry-chandler
core   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source