Nonvolatile and SEU-Recoverable Latch Based on FeFET and CMOS for Energy-Harvesting Devices
International audienceNonvolatile memories are widely used in emerging energy-harvesting Internet-of-Things (IoT) applications, and nonvolatile memories constructed from FeFET devices hold great promise. This paper presents a nonvolatile and single-event-
Liu, Guangzhu +7 more
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This paper presents a novel content-addressable memory (CAM) array fabricated in a 28 nm ferroelectric field-effect transistor (FeFET) technology, tailored for rapid exact and approximate associative search. Leveraging a 2FeFET CAM bitcell structure, the
Yin, Xunzhao +15 more
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FeFET-embedded CMOS Circuit Design for Processing-in-memory Adder
To address the “memory wall” bottleneck in von Neumann architectures, this paper proposes novel FeFET-embedded Complementary Metal-Oxide-Semiconductor (CMOS) adders for efficient Processing-in-Memory (PiM).
Chengyu He +6 more
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Observation of logic states of HfO2-based ferroelectric FETs using STEM-DPC [PDF]
Nemec Thorgund +6 more
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The rapid advancement of AI‐enabled applications has resulted in an increasing need for energy‐efficient computing hardware. Logic‐in‐memory is a promising approach for processing the data stored in memory, wherein fast and efficient computations are ...
Jingjie Niu +8 more
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ProtFe: Low-Cost Secure Power Side-Channel Protection for General and Custom FeFET-Based Memories
Ferroelectric Field Effect Transistors (FeFETs) have spurred increasing interest in both memories and computing applications, thanks to their CMOS compatibility, low-power operation, and high scalability.
Shi, Liang +11 more
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Reliable multi-level cell programming in FeFET arrays for in-memory computing
With the increasing demands of AI and edge computing, traditional computing architectures face challenges in efficiency and scalability. This paper explores the use of multi-level cell FeFET arrays for in-memory computing systems, highlighting a program ...
Müller, Franz +5 more
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Thermally Stable HfO<sub>2</sub>-Based Ferroelectric Transistors for CMOS-Compatible Energy-Efficient Neuromorphic Integrated Circuits. [PDF]
Tikhonenko FV +4 more
europepmc +1 more source
Assessment of Advanced Non-Volatile Fefet Memories Based on Hafnium-Oxide
The ESA project11European Space Agency contract number 4000132931/20/NL/FE "Assessment of Advanced NonVolatile Memories" is about the identification and evaluation of emerging non-volatile memory technology for future missions. A detailed market analysis
Havel, Viktor +3 more
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Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration. [PDF]
He C, Li W, Li J, Li Q, Xie Z, Du T.
europepmc +1 more source

