Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]
Das A +18 more
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Role of the channel on the memory window of HfZrO<sub>x</sub> ferroelectric field-effect transistors with p-type Si-doped InZnO<sub>x</sub> channel. [PDF]
Park H, Lim S, Lee S, Lee JW, Woo J.
europepmc +1 more source
Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions. [PDF]
Li C +7 more
europepmc +1 more source
Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision. [PDF]
Huo J +8 more
europepmc +1 more source
Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]
Chen X, Wang Z, Meng J, Wang T.
europepmc +1 more source
In-memory computing (IMC) architecture emerges as a promising paradigm, improving the energy efficiency of multiply-and-accumulate (MAC) operations within DNNs by integrating the parallel computations within the memory arrays.
Yang, Zeyu +5 more
core
High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors. [PDF]
Paasio E +12 more
europepmc +1 more source
Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]
Kang HY +4 more
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All-Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In-Memory Computing. [PDF]
Niu J +7 more
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Homogeneous integration of two-dimensional material-based optoelectronic neurons and ferroelectric synapses for neuromorphic vision. [PDF]
Wang J +14 more
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