Results 151 to 160 of about 1,280 (239)

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

open access: yesACS Nano
Das A   +18 more
europepmc   +1 more source

Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions. [PDF]

open access: yesNat Commun
Li C   +7 more
europepmc   +1 more source

Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision. [PDF]

open access: yesNat Commun
Huo J   +8 more
europepmc   +1 more source

Energy Efficient Dual Designs of FeFET-Based Analog In-Memory Computing with Inherent Shift-Add Capability

open access: yes
In-memory computing (IMC) architecture emerges as a promising paradigm, improving the energy efficiency of multiply-and-accumulate (MAC) operations within DNNs by integrating the parallel computations within the memory arrays.
Yang, Zeyu   +5 more
core  

High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors. [PDF]

open access: yesMicrosyst Nanoeng
Paasio E   +12 more
europepmc   +1 more source

Homogeneous integration of two-dimensional material-based optoelectronic neurons and ferroelectric synapses for neuromorphic vision. [PDF]

open access: yesNat Commun
Wang J   +14 more
europepmc   +1 more source

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