Results 141 to 150 of about 1,280 (239)

An Efficient FeFET-Based Compute-In-Memory Macro Readout Inspired by the 3T Pixel Array Cell

This paper proposes an In-Memory Computing (IMC) FeFET-based macro for ÁI acceleration. Central to this concept is the adoption of a novel readout circuit inspired by the proven efficiency of the 3T pixel array cell. Designed in 28 nm GF technology, this
Laleni, Nellie, Kämpfe, Thomas
core   +1 more source

Time-Domain Simulation and Optimization of the Memory Window for HZO-Based FeFETs Using the NLS Model. [PDF]

Micromachines (Basel)
Han S, Lü W, Liang Y, Dai T.
europepmc   +1 more source

Amphibian-inspired neuromorphic dynamic vision systems based on ferroelectric field-effect transistor. [PDF]

Nat Commun
Zhai Y, Chen P, Luo Y, Lv Z, Ding G, Yang J, Zheng M, Zhou Y, Chai Y, Han ST.   +9 more
europepmc   +1 more source

Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory. [PDF]

Adv Mater
Li M, Yang FS, Liu Y, Zhang C, Li E, Yang J, Lin CY, Liu H, Luo C, Chien HC, Chang YM, Yang JC, Shen CH, Chueh YL, Li J, Zhang J, Wu JL, Chiu PW, Lin YF.   +18 more
europepmc   +1 more source

Light polarization-based electro-optic memory. [PDF]

Nat Commun
Wan Q, Zhao S, Tang B, Yu ZG, Fang Z, Leong JF, Xu Z, Zhang YW, Zamburg E, Thean AV.   +9 more
europepmc   +1 more source

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +1 more source

Automated, physics-guided AI framework for asymmetry-aware ferroelectric compact models. [PDF]

Sci Rep
Kim J, Lee J, Park J, Kim M, Kim H, Kang J, Cho H, Choi HW, Jeon J.   +8 more
europepmc   +1 more source

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]

ACS Appl Mater Interfaces
Das A, Paul A, Tewari M, Lou ZF, Chang YT, Senapati A, Kumar G, Raffel Y, Useinov A, Tumilty N, Wu TL, Lashkare S, Agarwal T, Lee MH, De S.   +14 more
europepmc   +1 more source

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]

Sci Adv
Meng D, Ma X, Shen Z, Xu L, Peng LM, Qiu C.   +5 more
europepmc   +1 more source