Results 121 to 130 of about 751 (187)

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +1 more source

Nonvolatile and SEU-Recoverable Latch Based on FeFET and CMOS for Energy-Harvesting Devices

International audienceNonvolatile memories are widely used in emerging energy-harvesting Internet-of-Things (IoT) applications, and nonvolatile memories constructed from FeFET devices hold great promise. This paper presents a nonvolatile and single-event-
Liu, Guangzhu, Girard, Patrick, Lin, Zhuoyuan, Wen, Xiaoqing, Cui, Jie, Zhang, Qingyang, Huang, Zhengfeng, Yan, Aibin   +7 more
core   +1 more source

A 28nm FeFET-Based Content-Addressable Memory for Energy-Efficient Similarity Search and Few-Shot Learning

This paper presents a novel content-addressable memory (CAM) array fabricated in a 28 nm ferroelectric field-effect transistor (FeFET) technology, tailored for rapid exact and approximate associative search. Leveraging a 2FeFET CAM bitcell structure, the
Yin, Xunzhao, Niemier, Michael Thaddeus, Qian, Yu, Zhuo, Cheng, Ni, Kai, Sharifi, Mohammad Mehdi, Li, Mengyuan, Li, Bing, Laleni, Nellie, Baskaran, Subhashree, Müller, Franz, Kämpfe, Thomas, Vardar, Alptekin, Hu, Xiaobo Sharon, Seidel, Konrad, Günter, Marcel   +15 more
core   +1 more source

Device-Aware Test for Anomalous Charge Trapping in FeFETs

Proceedings of the 30th Asia and South Pacific Design Automation Conference
The development of Ferroelectric Field-Effect Transistor (FeFET) manufacturing requires high-quality test solutions, yet research on FeFET testing is still in a nascent stage. To generate a dedicated test method for FeFETs, it is critical to have a deep understanding of manufacturing defects and accurately model them.
Sicong Yuan, Changhao Wang, Moritz Fieback, Hanzhi Xun, Mottaqiallah Taouil, Xiuyan Li, Danyang Chen, Lin Wang 0111, Nicolò Bellarmino, Riccardo Cantoro, Said Hamdioui   +10 more
openaire   +2 more sources

Symbol detection in a MIMO wireless communication system using a FeFET-coupled CMOS ring oscillator array

Neuromorphic Computing and Engineering
Symbol decoding in multiple-input multiple-output (MIMO) wireless communication systems requires the deployment of fast, energy-efficient computing hardware deployable at the edge.
Harsh Kumar Jadia, Abhinaba Ghosh, Md Hanif Ali, Syed Farid Uddin, Sathish N, Shirshendu Mandal, Nihal Raut, Halid Mulaosmanovic, Stefan Dünkel, Sven Beyer, Suraj Amonkar, Udayan Ganguly, Veeresh Deshpande, Debanjan Bhowmik   +13 more
doaj   +1 more source

Logic-in-memory application of ferroelectric-based WS2-channel field-effect transistors for improved area and energy efficiency

npj 2D Materials and Applications
In this study, we applied ferroelectrics to the gate stack of Field Effect Transistors (FETs) with a 2D transition-metal dichalcogenide (TMDC) channel, actively researching for sub-2nm technology node implementation. Subsequently, we analyzed the circuit
Huijun Kim, Juhwan Park, Hanggyo Jung, Changho Ra, Jongwook Jeon   +4 more
doaj   +1 more source

ProtFe: Low-Cost Secure Power Side-Channel Protection for General and Custom FeFET-Based Memories

Ferroelectric Field Effect Transistors (FeFETs) have spurred increasing interest in both memories and computing applications, thanks to their CMOS compatibility, low-power operation, and high scalability.
Shi, Liang, Kämpfe, Thomas, Li, Xueqing, Xu, Yixin, Sun, Boran, Zhong, Hongtao, Yang, Huazhong, Yu, Yao, Ni, Kai, Li, Taixin, Wang, Tianyi, Narayanan, Vijaykrishnan   +11 more
core   +1 more source

Observation of logic states of HfO2-based ferroelectric FETs using STEM-DPC [PDF]

BIO Web of Conferences
Nemec Thorgund, Utess Dirk, Duenkel Stefan, Weisheit Martin, Mulaosmanovic Halid, Beyer Sven, Meyer Moritz Andreas   +6 more
doaj   +1 more source

Assessment of Advanced Non-Volatile Fefet Memories Based on Hafnium-Oxide

The ESA project11European Space Agency contract number 4000132931/20/NL/FE "Assessment of Advanced NonVolatile Memories" is about the identification and evaluation of emerging non-volatile memory technology for future missions. A detailed market analysis
Havel, Viktor, Plattner, Markus P., Slesazeck, Stefan, Steffens, Michael   +3 more
core   +1 more source

Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

InfoMat
The rapid advancement of AI‐enabled applications has resulted in an increasing need for energy‐efficient computing hardware. Logic‐in‐memory is a promising approach for processing the data stored in memory, wherein fast and efficient computations are ...
Jingjie Niu, Sumin Jeon, Donggyu Kim, Sungpyo Baek, Hyun Ho Yoo, Jie Li, Ji‐Sang Park, Yoonmyung Lee, Sungjoo Lee   +8 more
doaj   +1 more source