Results 121 to 130 of about 1,280 (239)
FeFET-Based Analog In-Memory Computing with Inherent Shift-and-Add Capability
In-memory computing (IMC) architecture has emerged as a highly promising approach, enhancing the energy efficiency of multiply-and-accumulate (MAC) operations in deep neural networks (DNNs) by embedding parallel computations directly into memory arrays ...
Yang, Zeyu +9 more
core +1 more source
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu +3 more
wiley +1 more source
FeSATLock: An Energy Efficient and SAT Attack Resilient Logic Locking Design With FeFET LUT Architecture for Enhanced Hardware Security [PDF]
Boolean satisfiability (SAT) attacks have been proven to be highly effective against logic locking techniques that secure intellectual property (IP). Prior research has improved the output corruptibility and SAT attack resiliency of logic locking, but ...
Birudu, Venu +5 more
core +1 more source
Symbol decoding in multiple-input multiple-output (MIMO) wireless communication systems requires the deployment of fast, energy-efficient computing hardware deployable at the edge.
Harsh Kumar Jadia +13 more
doaj +1 more source
Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu +10 more
wiley +1 more source
jerry-chandler/Nature-Communications-FeFET-CiM-Annealer: Nature-Communications-FeFET-CiM-Annealer
No description ...
jerry-chandler
core +1 more source
FeFET Process Integration and Characterization [PDF]
Hafnium oxide-based ferroelectrics are gaining popularity in the field of non-volatile memory due to their superior scalability in reference to traditional, lead-based ferroelectric materials and their compatibility with CMOS technology.
Merkel, Jordan
core +1 more source
Carrier Mobility Enhancement in Two‐Dimensional Semiconductor
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo +6 more
wiley +1 more source
Traditional light‐analyzing tools, known as spectrometers, are typically too bulky and expensive to fit into portable electronics like smartphones or wearables. In this study, we developed a microscopic, high‐performance spectrometer using a material called Indium Selenide combined with smart algorithms to accurately analyze light from the visible to ...
Jing Chen +8 more
wiley +1 more source
In this study, we applied ferroelectrics to the gate stack of Field Effect Transistors (FETs) with a 2D transition-metal dichalcogenide (TMDC) channel, actively researching for sub-2nm technology node implementation. Subsequently, we analyzed the circuit
Huijun Kim +4 more
doaj +1 more source

