Results 81 to 90 of about 1,280 (239)

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

NSIP: Neural Network SPICE Integration Platform for Ferroelectric Field‐Effect Transistor‐Based Crossbar Arrays

Advanced Intelligent Systems
This article presents the world's first demonstration of a neural network SPICE integration platform (NSIP) for simulating synaptic weights in HfZrO (HZO)‐based ferroelectric field‐effect transistor (FeFET) crossbar arrays tailored for neuromorphic ...
Juhwan Park, Huijun Kim, Hyunbo Cho, Jongwook Jeon   +3 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Enhanced Polarization Switching in HfZrO₂ MFS FeFET Using WO_x Interlayer

IEEE Journal of the Electron Devices Society
We demonstrate that the memory window (MW) of HfZrO2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with an InZnO channel/HZO/W gate stack can be noticeably widened to over 2 V by introducing an amorphous WO2.7 interlayer (IL) into the gate ...
Eunjin Kim, Hyoungjin Park, Jiae Jeong, Jiyong Woo   +3 more
doaj   +1 more source

Analog content-addressable memory from complementary FeFETs

Device
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive ...
Xiwen Liu, Keshava Katti, Yunfei He, Paul Jacob, Claudia Richter, Uwe Schroeder, Santosh Kurinec, Pratik Chaudhari, Deep Jariwala   +8 more
openaire   +3 more sources

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Ferroelectric compute-in-memory annealer for combinatorial optimization problems

Nature Communications
Computationally hard combinatorial optimization problems (COPs) are ubiquitous in many applications. Various digital annealers, dynamical Ising machines, and quantum/photonic systems have been developed for solving COPs, but they still suffer from the ...
Xunzhao Yin, Yu Qian, Alptekin Vardar, Marcel Günther, Franz Müller, Nellie Laleni, Zijian Zhao, Zhouhang Jiang, Zhiguo Shi, Yiyu Shi, Xiao Gong, Cheng Zhuo, Thomas Kämpfe, Kai Ni   +13 more
doaj   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage

, 2022
S.665-668We report 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers. Memory window up to 3.5V, switching speed of 300ns, 10 years retention, and 10 4 endurance are reported. The gate stack
Steinke, P., Polakowski, P., Zimmermann, K., Kämpfe, T., Pätzold, B., Mühle, U., Olivo, R., Czernohorsky, M., Ali, T., Hoffmann, R., Müller, F., Lederer, M., Seidel, K., Lehninger, D., Rudolph, M., Müller, J., Kühnel, K.   +16 more
core   +1 more source