Results 81 to 90 of about 751 (187)
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang +8 more
wiley +1 more source
Advanced Intelligent SystemsThis article presents the world's first demonstration of a neural network SPICE integration platform (NSIP) for simulating synaptic weights in HfZrO (HZO)‐based ferroelectric field‐effect transistor (FeFET) crossbar arrays tailored for neuromorphic ...
Juhwan Park +3 more
doaj +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
, 2023 424429This letter proposes a memory cell, denoted by 1F-1 T, consisting of a ferroelectric field-effect transistor (FeFET) cascaded with another current-limiting transistor (T).
Laleni, Nelli +27 more
core +1 more source
Embedding hafnium oxide based FeFETs in the memory landscape
2018 International Conference on IC Design & Technology (ICICDT), 2018 During the last decade ferroelectrics based on doped hafnium oxide emerged as promising candidates for realization of ultra-low-power non-volatile memories. Two spontaneous polarization states occurring in the material that can be altered by applying electrical fields rather than forcing a current through and the materials compatibility to CMOS ...
Stefan Slesazeck +2 more
openaire +3 more sources
Advanced Electronic Materials, EarlyView.ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source
Ferroelectric compute-in-memory annealer for combinatorial optimization problems
Nature CommunicationsComputationally hard combinatorial optimization problems (COPs) are ubiquitous in many applications. Various digital annealers, dynamical Ising machines, and quantum/photonic systems have been developed for solving COPs, but they still suffer from the ...
Xunzhao Yin +13 more
doaj +1 more source
Enhanced Polarization Switching in HfZrO2 MFS FeFET Using WOx Interlayer
IEEE Journal of the Electron Devices SocietyWe demonstrate that the memory window (MW) of HfZrO2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with an InZnO channel/HZO/W gate stack can be noticeably widened to over 2 V by introducing an amorphous WO2.7 interlayer (IL) into the gate ...
Eunjin Kim +3 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram +10 more
wiley +1 more source