Results 31 to 40 of about 751 (187)

Brain-inspired ferroelectric Si nanowire synaptic device

APL Materials, 2021
We herein demonstrate a brain-inspired synaptic device using a poly(vinylidene fluoride) and trifluoroethylene (PVDF-TrFE)/silicon nanowire (Si NW) based ferroelectric field effect transistor (FeFET). The PVDF-TrFE/Si NW FeFET structure achieves reliable
M. Lee, W. Park, H. Son, J. Seo, O. Kwon, S. Oh, M. G. Hahm, U. J. Kim, B. Cho   +8 more
doaj   +1 more source

Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator

Advanced Intelligent Systems, 2023
Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN).
Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe   +17 more
doaj   +1 more source

Ferroelectric Relaxation Oscillators and Spiking Neurons

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
We report the experimental demonstration of the ferroelectric field-effect transistor (FEFET)-based relaxation oscillators and spiking neurons. The ferroelectric relaxation oscillators and the ferroelectric spiking neurons, harnessing the abrupt ...
Zheng Wang, Asif I. Khan
doaj   +1 more source

A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

, 2022
S.485-488We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology.
Müller, S., Löhr, D.-A., Polakowski, P., Majer, M., Richter, R., Dünkel, S., Gehring, O., Mikolajick, T., Beyer, S., Moll, P., Wittek, S., Müller, B., Melde, T., Fuchs, C., Höntschel, J., Pellerin, J., Rice, B., Slesazeck, S., Müller, J., Ocker, J., Noack, M., Trentzsch, M., Mulaosmanovic, H.   +22 more
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Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications

, 2022
S.32-35The utilization of FeFET technology in NAND based architectures is dependent on the role of pass voltage disturb of pass cells during the readout of selected cells.
Ali, T., Hoffmann, R., Biedermann, K., Seidel, K., Steinke, P., Rudolph, M., Zimmermann, K., Pätzold, B., Houdt, J. van, Kühnel, K., Czernohorsky, M.   +10 more
core   +1 more source

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Nanoscale Research Letters, 2020
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance.
Siqing Zhang, Yan Liu, Jiuren Zhou, Meng Ma, Anyuan Gao, Binjie Zheng, Lingfei Li, Xin Su, Genquan Han, Jincheng Zhang, Yi Shi, Xiaomu Wang, Yue Hao   +12 more
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Comprehensive Modeling of Switching Behaviour in BEOL FeFET for Monolithic 3D Integration

, 2023
We have developed a comprehensive modeling framework to explain the switching characteristics of BEOL-compatible FeFET with an amorphous IGZO channel.
Hussam Amrouch (15351787), Yogesh Singh Chauhan (11925398), shubham kumar (12105614), om prakash (15353304), simon thomann (13863522), kai ni (15353307)   +5 more
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A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
The ferroelectric field-effect transistor (FeFET) is a promising memory device technology due to desirable attributes, such as fast access times, high memory cell density, good endurance, compatibility with CMOS process, and impressive scalability. While
Jianze Wang, Wei Zhang, Xuanyao Fong
doaj   +1 more source

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

Nanoscale Research Letters, 2019
The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory.
Wenwu Xiao, Chen Liu, Yue Peng, Shuaizhi Zheng, Qian Feng, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao, Yichun Zhou   +9 more
doaj   +1 more source

FeFET-based MirrorBit cell for High-density NVM storage

, 2023
HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, high scalability, and CMOS compatibility. In this work, we show an n-channel
Srinu, Rowtu, Lashkare, Sandip, Singh, Ajay Kumar, Saraswat, Vivek, Beyer, Sven, Dünkel, Stefan, Mulaosmanovic, Halid, Meihar, Paritosh, Ganguly, Udayan   +8 more
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