Results 21 to 30 of about 1,280 (239)

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Advanced Electronic Materials, 2023
The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging.
Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim   +8 more
doaj   +1 more source

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

Nano Select, 2021
The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park, Jae‐Gil Lee, Cheol Seong Hwang   +2 more
doaj   +1 more source

Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control

IEEE Journal of the Electron Devices Society, 2022
We have experimentally demonstrated memory operation of a HfO2-based ferroelectric FET (FeFET) with an ultrathin MoS2 channel and bottom-gate structure. ZrO2 seed layer enhances ferroelectricity in HfZrO2 by post deposition anneal process.
Jiawen Xiang, Wen Hsin Chang, Takuya Saraya, Toshiro Hiramoto, Toshifumi Irisawa, Masaharu Kobayashi   +5 more
doaj   +1 more source

Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

IEEE Journal of the Electron Devices Society, 2020
In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectricity
Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao   +6 more
doaj   +1 more source

Non-volatile hybrid optical phase shifter driven by a ferroelectric transistor

, 2022
Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters which can retain information without a power supply, are highly desirable for low ...
Rui Tang (298719), Kouhei Watanabe (6560756), Shinichi Takagi (6410516), Masahiro Fujita (355423), Hanzhi Tang (14362041), Kasidit Toprasertpong (13141774), Mitsuru Takenaka (6410513)   +6 more
core   +1 more source

On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

IEEE Journal of the Electron Devices Society, 2019
We have investigated the physical mechanism of steep subthreshold slope (SS) in ferroelectric FET (FeFET) based on a dynamic ferroelectric (FE) model without traversing the negative capacitance (NC) region of the S-shaped polarization-voltage predicted ...
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET

, 2022
Art.222903, 6 S.The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative.
Büttner, T., Polakowski, P., Steinke, P., Kämpfe, T., Pätzold, B., Hanisch, N., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K., Thrun, X.   +16 more
core   +1 more source

FeFET-based Binarized Neural Networks Under Temperature-dependent Bit Errors [PDF]

, 2021
Ferroelectric FET (FeFET) is a highly promising emerging non-volatile memory (NVM) technology, especially for binarized neural network (BNN) inference on the low-power edge.
Gupta, Aniket, Henkel, Jorg, Amrouch, Hussam, Yayla, Mikail, Chen, Kuan-Hsun, Morik, Katharina, Buschjager, Sebastian, Chen, Jian-Jia   +7 more
core   +1 more source

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

, 2022
S.3769-3774We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with an optimized interfacial layer in a gate-first scheme. The effect of increasing the
Büttner, T., Polakowski, P., Steinke, P., Zimmermann, K., Kämpfe, T., Pätzold, B., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K.   +15 more
core   +1 more source

FeFET: A versatile CMOS compatible device with game-changing potential

, 2022
S.55-58With the discovery of ferroelectricity in HfO 2 based thin films and the co-integration of ferroelectric field effect transistors (FeFET) into standard high-k metal gate (HKMG) CMOS platforms, the FeFET has emerged from a theoretical dream to an ...
Paul, J., Hellmich, A., Müller, F., Ali, T., Hoffmann, R., Lederer, M., Seidel, K., Beyer, S., Mikolajick, T., Schuster, M., Müller, J., Kleimaier, D., Ocker, J., Noack, M., Mennenga, M., Müller, S., Breyer, E.T., Kämpfe, T., Zhou, H., Dünkel, S., Tassan, F., Utess, D., Pourkeramati, A., Pellerin, J., Benoist, A., Slesazeck, S., Trentzsch, M., Mulaosmanovic, H.   +27 more
core   +1 more source