Results 121 to 130 of about 12,171 (252)

Consistent and Efficient Modeling of the Nonlinear Properties of Ferroelectric Materials in Ceramic Capacitors for Frugal Electronic Implants. [PDF]

Sensors (Basel), 2020
Olsommer Y, Ihmig FR.
europepmc   +1 more source

Artificial Grain Boundaries Created by Freestanding Membrane Transfer Reveal Angle‐Dependent Ferroelectric Switching and Leakage in BaTiO3 [PDF]

Advanced science
Artificial grain boundaries are created in BaTiO3$\text{BaTiO}_3$ thin films by freestanding membrane transfer, enabling direct isolation of a single boundary. Local ferroelectric switching and leakage are found to concentrate at the grain boundary, while increasing misorientation systematically enhances conduction.
Yin S, Lin Y, Wei Y, Fang Y, Su Y, Chen Y, Lin Y, Wei C, Wu C, Chiang C, Liu H, Yang J, Chen Y, Huang Y.   +13 more
europepmc   +2 more sources

Beyond-Classical Ferroelectric Metamaterials: 3D-Printed Planar Lattices With Programmable Electro-Thermo-Mechanical Coupling. [PDF]

Adv Sci (Weinh)
Planar ferroelectric lattices with rationally‐tailored topology and polarization achieve programmable piezoelectric and pyroelectric properties. Analytical modeling, homogenization, and experiments collectively demonstrate enhanced and tunable longitudinal, transverse, and shear piezoelectric responses, together with substantially improved ...
Shi J, Ju K, Chen H, Orsat V, Sasmito AP, Ahmadi A, Akbarzadeh A.   +6 more
europepmc   +2 more sources

Multiferroic Quantum Criticality in a Proper Ferroelectric Quasi-one-dimensional Ising Antiferromagnet. [PDF]

Adv Sci (Weinh)
Sr1−xBaxCo2V2O8 is established as a magnetic‐ion‐based proper displacive ferroelectric whose transition is continuously suppressed by Ba substitution to a ferroelectric quantum critical point. In the resulting quantum paraelectric regime, a transverse magnetic field induces magnetic quantum criticality, realizing multiferroic quantum criticality and ...
Nagai T, Yu P, Nakano A, Kimura T.
europepmc   +2 more sources

Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers

Advanced Science, EarlyView.
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng, Guangxu Su, Yangyang Fan, Jiaan Li, Fanxin Liu, Yee Sin Ang   +5 more
wiley   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

Advanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong, Honglei Wang, Pietro Tordi, Ying Chieh Hu, Adrián Tamayo, Bing Wu, Hyun Soo Ahn, Zdenek Sofer, Jong Hoon Jung, Massimo Bonini, Paolo Samorì   +10 more
wiley   +1 more source

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

Advanced Science, EarlyView.
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai, Ri He, Junxian Liu, Liangzhi Kou   +3 more
wiley   +1 more source

Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration

Advanced Science, EarlyView.
This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang, Yun Ji, Sanchali Mitra, Yufei Shi, Haofei Zheng, Yee Sin Ang, Kah‐Wee Ang   +6 more
wiley   +1 more source

Real‐Time Ferroelectric Domain Wall Dynamics During Electric Poling and Depoling

Advanced Science, EarlyView.
Real‐time visualization of domain wall dynamics during alternating‐current poling, direct‐current poling, and electrical depoling in relaxor‐PT ferroelectric single crystals reveals distinct field‐dependent pathways and strong path dependence. Instant polarized light microscopy uncovers reversible domain wall nucleation, motion, and reconfiguration ...
Ziqi Wang, Zhengze Xu, Anastasia Timofeeva, Hossam Elnaggar, Sipan Liu, Yusen Pei, Reece Henry, Brendan O'Connor, Eunkyoung Shim, Franky So, Kara Peters, Xiaoning Jiang, Jun Liu   +12 more
wiley   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source