Results 131 to 140 of about 11,275 (259)

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Zero Thermal Expansion and Local Structure in KxMnxFe2‐xMo3O12‐Based Materials

Advanced Science, EarlyView.
Local structure engineering via ion insertion drives local structural transformation from low‐symmetry P21/a to high‐symmetry R‐3c, enhancing structural flexibility and realizing a transition from positive thermal expansion to wide‐temperature‐range zero thermal expansion in KxMnxFe2‐xMo3O12‐based materials.
Gongsen He, Yongqiang Qiao, Shibo Zhao, Xin Chen, Xiangkai Hao, Kaiyue Zhao, Xinglai Yuan, Mengru Li, Wen Yin, Shintaro Kobayashi, Shogo Kawaguchi, Bingbing Fan, Rui Zhang, Qilong Gao   +13 more
wiley   +1 more source

Optoelectronic-Driven van der Waals Ferroelectric Materials-Based Memory Devices for Retinomorphic and In-Sensory Hardware. [PDF]

Adv Sci (Weinh)
Pal P, Wang YH, Kumar S, Kumar S, Prodromakis T.   +4 more
europepmc   +1 more source

Flexible Unusual Ternary‐Component Graded‐Modulus Dielectric Films with High‐Density Capacitive Energy Storage

Advanced Science, EarlyView.
Hierarchical PP–LSR107–BaTiO3 nanocomposite films are fabricated by one‐step extrusion and stretching for roll‐to‐roll manufacture, combining high energy storage and processing flexibility. LSR107 surrounds BaTiO3‐rich regions, locating amorphous PP, decreasing defects, and introducing deep traps that homogenize the electric field and suppress charge ...
Yi Gao, Xin‐Jie Wang, Lei Huang, Kun Xing, Baoquan Wan, Yan‐Hui Song, Jian‐Tao Wang, Li‐Juan Yin, Tong Liang, Yan Meng, Zunpeng Feng, Kai Huang, Ke Bi, Shao‐Long Zhong, Zhi‐Min Dang   +14 more
wiley   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Stress‐to‐Light Conversion in an Earth‐Abundant Oxide Semiconductor

Advanced Science, EarlyView.
Stress‐to‐light conversion in solids represents a unique photonic functionality, yet it has never been realized in a chemically simple and sustainable material. Here, we show that sustainable semiconductor ZnO exhibits strong near‐infrared (NIR) luminescence under elastic stress when defect‐engineered to stabilize the p‐type state.
Tomoki Uchiyama, Koki Otonari, Reona Omori, Guangfa Yang, Eiji Nishibori, Ying Chen, Xu‐Guang Zheng, Chao‐Nan Xu   +7 more
wiley   +1 more source

Targeting Golgi–STING Signaling to Reprogram Innate and Adaptive Immunity for the Treatment of Implant‐Associated Infections

Advanced Science, EarlyView.
This study presents an ultrasound‐responsive nanoplatform, CS‐BT@MZ@NEs, with a BaTiO3/Mn‐Zif‐8 core and a chondroitin sulfate coating for Golgi targeting. By leveraging neutrophil hitchhiking, it enables targeted delivery to infection sites. Under ultrasound stimulation, CS‐BT@MZ@NEs generates ROS and modulates Golgi pH to activate cGAS–STING ...
Shicheng Huo, Naifeng Zhu, Zhuocheng Lyu, Yifei Liu, Zhenjiang Xu, Chun Zhou, Yaochao Zhao, Changgui Shi   +7 more
wiley   +1 more source