Results 151 to 160 of about 12,171 (252)
Design Rules for Quantitative Control of Intragrain Planar Defects in Halide Perovskites
Advanced Science, EarlyView.Dose‐budgeted electron microscopy reveals the design rules governing intragrain planar defects in halide perovskites: {112}t ferroelastic twins proliferate with increasing tetragonality and grain size, whereas {111}c twins and stacking faults emerge as the lattice approaches cubic symmetry.
Byeongjun Gil +3 more
wiley +1 more source
Advanced Science, EarlyView.Freestanding hierarchical‐porous BCZT thin films integrate a compliant porous surface with a dense piezoceramic backbone to balance mechanical reliability, voltage sensitivity, and acoustic coupling. The films enable stable wearable pulse‐wave monitoring and enhanced tissue‐coupled ultrasonic energy harvesting, offering a promising route toward soft ...
Zifan Li +14 more
wiley +1 more source
Giant Direct Magnetoelectric Effect in Nanocomposite CoFe2O4:PVDF‐TrFE Thin Films
Advanced Science, EarlyView.A novel three‐step grow‐etch‐fill fabrication approach creates structured cobalt ferrite/ferroelectric polymer nanocomposites with high interfacial areas. Driven by efficient strain‐mediated coupling, this crystalline system achieves a giant room‐temperature magnetoelectric coefficient nearly two orders of magnitude higher than other CFO/PVDF‐TrFE thin
Muireann de h‐Óra +8 more
wiley +1 more source
Advanced Science, EarlyView.In GdMn2O5, sublattice‐resolved EXAFS and diffraction analysis reveal pronounced spin‐phonon coupling and an unexpected opposing pressure response: the Mn‐driven Néel temperature slightly decreases while the Gd‐sublattice ordering temperature rises under pressures up to 0.86 GPa.
Romualdo S. Silva Jr. +9 more
wiley +1 more source
Deep learning directed synthesis of fluid ferroelectric materials.
Mater HorizParton-Barr C +8 more
europepmc +1 more source
Probabilistic Computing via Gate‐Tunable Random Telegraph Noise
Advanced Science, EarlyView.Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun +8 more
wiley +1 more source
Molecularly Engineered Nitrate Double Perovskites with Elevated Ferroelectric Phase Transition Temperature and Large Piezoelectric Response. [PDF]
Adv Sci (Weinh)This study reports molecularly engineered nitrate double perovskites based on systematic BI‐site cation substitution. This molecular engineering modulates local BI···NO3 interactions, nitrate connectivity, and collective physical responses, accompanied by structural conversion from mixed corner‐/face‐sharing structures to three‐dimensional corner ...
Ye L +12 more
europepmc +2 more sources
Crystallized Domain Walls in HfO2 Enable Chessboard‐Type Ultra‐High‐Dense Ferroelectric Memory
Advanced Science, EarlyView.In general, DWs in ferroelectrics stabilize within a widely spread transition region between two oppositely polarized domains, which severely limits the achievable memory density. Here, the reported DWs in HfO2 constitute perfect crystalline structures along arbitrary crystallographic directions, enabling the formation of the narrowest square‐shaped ...
Pawan Kumar +4 more
wiley +1 more source
Multi‐Modal Low‐Power Adaptive Braille Recognition System Based on Hf0.3Zr0.7O2 Memristor
Advanced Science, EarlyView.A multimodal adaptive perception system based on HZO ferroelectric memristor realizes efficient Braille digit recognition via reservoir computing. It delivers high recognition accuracy with ultralow‑energy analog computation, offering a promising hardware solution for environment‑robust neuromorphic assistive devices for visually impaired users ...
Jikang Xu +9 more
wiley +1 more source