Results 161 to 170 of about 11,275 (259)
Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng +5 more
wiley +1 more source
Symmetry-locked six-state control of altermagnetism via sliding ferroelectricity. [PDF]
Sun W, Wang W, Yang C, Huang S, Cheng Z.
europepmc +1 more source
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong +10 more
wiley +1 more source
Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory. [PDF]
Li Z +11 more
europepmc +1 more source
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley +1 more source
Recent progress in single-phase molecular multiferroic materials with ferroelectricity and ferroelasticity. [PDF]
Lun MM +7 more
europepmc +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Solution-Processed Submicron-Channel Organic Ferroelectric Memristors with a Low Operation Voltage of 1 V. [PDF]
Xu K +6 more
europepmc +1 more source
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Nonlinear Transverse Transport in a Ferromagnetic Polar Metal
This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha +13 more
wiley +1 more source

