Results 161 to 170 of about 58,332 (288)
Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao +6 more
wiley +1 more source
Two-Dimensional Ferroelectric Materials: From Prediction to Applications. [PDF]
Jiang S, Wang Y, Zheng G.
europepmc +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Prediction of dielectric properties of ferroelectric materials based on deep neural networks. [PDF]
Wang J +9 more
europepmc +1 more source
Application of ferroelectric materials for improving output power of energy harvesters. [PDF]
Kim TY, Kim SK, Kim SW.
europepmc +1 more source
The first TrFE‐free ferroelectric polymers exhibiting concurrently a morphotropic phase boundary and high Curie temperature are reported through a grafting strategy, which is completely different from previous methods to design MPB by composition and irradiation. This finding offers a cost‐effective solution to decode the long‐standing inverse relation
Zekai Fei +6 more
wiley +1 more source
Computational study of thin films made from the ferroelectric materials with Paul Painlevé approach and expansion and variational methods. [PDF]
Shao R +5 more
europepmc +1 more source
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang +7 more
wiley +1 more source
Ferroelectric materials for neuroinspired computing applications. [PDF]
Wang D, Hao S, Dkhil B, Tian B, Duan C.
europepmc +1 more source
Emerging Molecular Antiferroelectrics: Advances and Prospects
This review focuses on the current research progress in emerging molecular antiferroelectrics, encompassing their diverse structures, antiferroelectricity‐associated properties, and application exploration, including energy storage, electrocaloric refrigeration, and electrostriction.
Xiaoqi Li +6 more
wiley +1 more source

