Results 181 to 190 of about 58,332 (288)

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials, EarlyView.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Multifunctional Polycrystalline Ferroelectric Materials [PDF]

, 2011
Lorena Pardo, Jesús Ricote
openaire   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]

Nanomicro Lett
Chen X, Wang Z, Meng J, Wang T.
europepmc   +1 more source

MXenes: Bridging the Gap Between Advanced Materials and Sustainable Technologies in Energy and Environmental Applications

Advanced Electronic Materials, EarlyView.
MXenes, a family of two‐dimensional transition metal carbides and nitrides, exhibit exceptional physical and chemical properties tunable through surface functionalization. This review summarizes recent advances in MXene synthesis, property modulation, and composite fabrication.
Fatemeh Saeedi, Erfan Zare, Reza Ansari, Mojtaba Haghgoo, Saeid Sahmani   +4 more
wiley   +1 more source

Ferroelectric materials for photovoltaics

, 2017
Ferroelectric photovoltaic has been intensively studied during the last years due to possible high efficient charge separation by presence of an internal electric field. Ferroelectric materials show permanent electrical polarization. Ideally, electric contacts would screen the polarization, but if screening is not perfect, it results in the generation ...
openaire   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

A Perturbation Model of Gradient Energy Anisotropy for Phase-Field Simulation of Ferroelectrics. [PDF]

Materials (Basel)
Shi X, Liu J, Xu K, Wang H, Wang Z, Wang N, Huang H, Liu Z.   +7 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source