Results 171 to 180 of about 11,275 (259)

Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]

Nanomicro Lett
Chen X, Wang Z, Meng J, Wang T.
europepmc   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Decoding THz-Driven Dynamic Fingerprints of Ferroelectric Nanotwin Networks. [PDF]

Adv Mater
Li X, Ross A, Stoica VA, Das S, Hazra S, Wang HH, Padma H, Hoffmann MC, Kramer P, Song S, Nelson S, Sato T, Zhu D, Ramesh R, Martin LW, Cao Y, Freeland JW, Lindenberg AM, Wen H, Chen LQ, Gopalan V.   +20 more
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Re-refinement of the structure of the planar hexagonal phase of ZnO nanocrystals. [PDF]

Acta Crystallogr B Struct Sci Cryst Eng Mater
Li M, Zhang L, Ren W, Reimers JR.
europepmc   +1 more source

Temperature‐Graded Deposition of HfZrOx for Ferroelectric Capacitors With Enhanced Polarization, Reliability, and Switching

Advanced Electronic Materials, EarlyView.
Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng, Yin‐Chen Sun, Yu‐Cheng Kao, Hsin‐Yu Hsu, Pin‐Jiun Wu, Yung‐Hsien Wu   +5 more
wiley   +1 more source

Soft Ferroelectrics in One Dimension: Ferroelectric Columnar Liquid Crystals. [PDF]

Chempluschem
Park S, Cho BK.
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Strain-Engineered Phase Diagrams in (SrTiO₃)₈/(BaTiO₃)₈ Superlattices: Toward Néel Skyrmions and Energy Storage. [PDF]

Nanomaterials (Basel)
Dan T, Zhang W, Yang F, Wang J, He Y, Wu P.   +5 more
europepmc   +1 more source