High-entropy enabled two-dimensional ferroelectricity and memristive synapses in van der Waals layered materials. [PDF]
Sun N +17 more
europepmc +1 more source
Chemical disorder engineering reconfigures BO6 oxygen‐octahedron rotations in lead‐free K0.5Na0.5NbO3 ceramics from local ordering into a random distribution, dissolving the longstanding trade‐off between optical transparency and electromechanical strain.
Xia Luo +5 more
wiley +1 more source
Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory. [PDF]
Gong FH +16 more
europepmc +1 more source
Electric field-controlled spin transport in a topological insulator interfaced with a ferroelectric antiferromagnet. [PDF]
Kumar Y +16 more
europepmc +1 more source
Freestanding PZT Films for Integrated Wearable Sensing and Intelligent Acoustic Recognition
A freestanding epitaxial PZT/LaNiO3/Pt heterostructure is achieved via water‐assisted delamination from mica, effectively eliminating substrate‐induced clamping and releasing intrinsic ferroelectricity. The released film exhibits substantially enhanced remanent polarization and piezoelectric response, delivering excellent mechanical flexibility and ...
Hailong Pan +6 more
wiley +1 more source
Defect-engineered BT-based ceramics: correlating phase coexistence, electrocaloric response and energy storage performance <i>via</i> Fe and Mn substitution. [PDF]
Kacem H +4 more
europepmc +1 more source
Uniaxial Strain‐Driven Ferroelastic Domain Tuning in LaAlO3${\rm LaAlO}_3$
The present work demonstrates based on AFM, μ$\umu$‐Raman spectroscopy, XRD, and first‐principles, that uniaxial strain provides a handle for tuning the ferroelastic domain populations in lanthanum aluminate, driving a continuous and controlled phase transition from a four‐variant rhombohedral crystal system to a two‐variant orthorhombic crystal system
Matthias Roeper +17 more
wiley +1 more source
Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer +19 more
wiley +1 more source
Trilayer oxide architecture introduces interfacial asymmetry and surface roughness in SRO/BTO/SRO heterostructures, creating a locally modulated polar and magnetic landscape. This design enhances the topological‐Hall‐like response, achieving a broad 5–90 K stability window and a maximum ρTHE of 0.8 µΩ cm, demonstrating an effective route to amplify ...
Sagar E. Shirsath +11 more
wiley +1 more source

