Results 191 to 200 of about 12,171 (252)

Interface-Engineered Hafnia-MoS2 Ferroelectric Field-Effect Transistors Enabling a Nearly Ideal Memory Window with Back-End-of-Line Compatibility. [PDF]

open access: yesACS Nano
Lee J   +16 more
europepmc   +1 more source

Interfacial Polarization Dynamics of Nitrile Dipoles in Organic Synaptic Transistors for Acoustic Reservoir Computing

open access: yesAdvanced Science, EarlyView.
Interfacial nitrile dipoles unlock tunable memory in organic synaptic transistors through competing polarization and relaxation. Their finite time dynamics are directly harnessed for acoustic reservoir computing, delivering 97.17% spoken digit recognition, reliable speech emotion and snoring recognition, and an ultralow event energy of only 50 aJ ...
Yutian Liu   +13 more
wiley   +1 more source

Dual-ferroelectric stacked high-performance field-effect transistor. [PDF]

open access: yesNat Commun
Wang P   +10 more
europepmc   +1 more source

Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications. [PDF]

open access: yesSmall Methods
Zhang J   +7 more
europepmc   +1 more source

Ferroelectric-assisted charge-transfer plasmons in graphene/CuInP<sub>2</sub>S<sub>6</sub>. [PDF]

open access: yesNat Commun
Shao Y   +22 more
europepmc   +1 more source

High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors. [PDF]

open access: yesMicrosyst Nanoeng
Paasio E   +12 more
europepmc   +1 more source

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