Results 191 to 200 of about 12,171 (252)
Interface-Engineered Hafnia-MoS2 Ferroelectric Field-Effect Transistors Enabling a Nearly Ideal Memory Window with Back-End-of-Line Compatibility. [PDF]
Lee J +16 more
europepmc +1 more source
Interfacial nitrile dipoles unlock tunable memory in organic synaptic transistors through competing polarization and relaxation. Their finite time dynamics are directly harnessed for acoustic reservoir computing, delivering 97.17% spoken digit recognition, reliable speech emotion and snoring recognition, and an ultralow event energy of only 50 aJ ...
Yutian Liu +13 more
wiley +1 more source
Dual-ferroelectric stacked high-performance field-effect transistor. [PDF]
Wang P +10 more
europepmc +1 more source
Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications. [PDF]
Zhang J +7 more
europepmc +1 more source
Ferroelectric-assisted charge-transfer plasmons in graphene/CuInP<sub>2</sub>S<sub>6</sub>. [PDF]
Shao Y +22 more
europepmc +1 more source
High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors. [PDF]
Paasio E +12 more
europepmc +1 more source
Electronic screening as a design lever in La-doped BaTiO<sub>3</sub>: coupling between polarization, dielectric response, and optical anisotropy. [PDF]
Azam S +4 more
europepmc +1 more source

