Results 191 to 200 of about 11,275 (259)

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Templated perpendicular ferroelectricity in textured Aurivillius oxide-based thin films. [PDF]

Nat Commun
Zhou S, Zhong S, Zhang S, Liao L, Huang S, Zhang Z, Zheng D, Li N, Yu H, Song C, Bai X, Zhang G, Lu Y, Wu K.   +13 more
europepmc   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]

ACS Appl Mater Interfaces
Das A, Paul A, Tewari M, Lou ZF, Chang YT, Senapati A, Kumar G, Raffel Y, Useinov A, Tumilty N, Wu TL, Lashkare S, Agarwal T, Lee MH, De S.   +14 more
europepmc   +1 more source

Morphotropic Phase Boundary Engineering via Heterostructure for Low‐Voltage Ferroelectric Capacitors

Advanced Electronic Materials, EarlyView.
Morphotropic phase boundary engineering in HfxZr1‐xO2 heterostructures enables low‐voltage and fast ferroelectric switching. This layer promotes polarization switching near 0 V, resulting in ≈25% reduction in coercive voltage and enhanced capacitance. This heterostructure design provides a practical route for energy‐efficient ferroelectric capacitors ...
Changhyeon Han, Been Kwak, Ki‐Ryun Kwon, Jeong‐Han Kim, Jiyong Yim, Hyun‐Min Kim, Sangeun Kwak, Daewoong Kwon   +7 more
wiley   +1 more source

LiNbO₃ and ZnO-Ni multilayer thin films as hybrid metamaterials towards tunable properties. [PDF]

RSC Adv
Bhatt NA, Quigley L, Lu J, Mihalko CA, Siddiqui A, Sarma R, Wang H.   +6 more
europepmc   +1 more source

Remarkable Electric Field‐Controlled Magnetism in La/Sm Co‐Substituted BiFeO3 Multiferroic Ceramics

Advanced Electronic Materials, EarlyView.
The remarkable electric field‐controlled magnetism (change of Mr reaches up to 62.7%) in La/Sm co‐substituted BiFeO3 ceramics, originating from the electric field‐induced phase transition of Pna21/R3c, is achieved by enhancing the dielectric strength. Moreover, the significant improvement in ferroelectricity is also determined after the electric field ...
Qing Tian Li, Xiao Li Zhu, Xiao Qiang Liu, Xiang Ming Chen   +3 more
wiley   +1 more source

Hybrid antiferroelectric-ferroelectric domain walls in noncollinear antipolar oxides. [PDF]

Nat Nanotechnol
Ushakov IN, Topstad M, Khalid MZ, Sharma N, Grams CP, Ludacka U, He J, Hunnestad KA, Sadeqi-Moqadam M, Glaum J, Selbach SM, Hemberger J, Becker P, Bohatý L, Kumar A, Íñiguez-González J, van Helvoort ATJ, Meier D.   +17 more
europepmc   +1 more source

Discovery of an Ideal HgO12 Icosahedron and Magnetodielectric Coupling in HgCu3Ti4O12

Advanced Electronic Materials, EarlyView.
HgCu3Ti4O12, an A‐site‐ordered quadruple perovskite with a perfectly regular HgO12 coordination, has been synthesized for the first time using high‐pressure methods. The material shows antiferromagnetic ordering at 31 K together with an intrinsic dielectric anomaly, implying possible magnetodielectric coupling.
Haoyu Zheng, Jianfa Zhao, Jun Deng, Lei Duan, Xudong Shen, Zhiwei Hu, Luchuan Shi, Yuling Dai, Xiaoming Chen, Xubin Ye, Jun Zhang, Wenmin Li, Zheng Deng, Xiancheng Wang, Chang‐Yang Kuo, Chien‐Te Chen, Youwen Long, Runze Yu, Changjiang Xiao, Changqing Jin   +19 more
wiley   +1 more source

Unconventional magnon-mediated spin torque enabled by ferroelectric domain engineering in multiferroic BiFeO₃. [PDF]

Nat Commun
Liang Y, Yan X, Jiang X, Jiang D, Bai H, Wang ZA, Chen H, Qiu X, Pharis D, Huang X, Jain R, Shao D, Jiang W, Yi D, Ralph DC, Nan T.   +15 more
europepmc   +1 more source