Results 201 to 210 of about 58,332 (288)

Discovery of Novel Materials with Giant Dielectric Constants via First‐Principles Phonon Calculations and Machine Learning

Advanced Intelligent Discovery, EarlyView.
We discovered novel materials with giant dielectric constants by combining first‐principles phonon calculations and machine learning. Screening 525 perovskites identified six candidates. RbNbO3 was synthesized under pressure and showed ε ≈ 800–1000. This validates our framework as a powerful tool for high‐performance dielectric materials discovery.
Hiroki Moriwake, Kazuki Shitara, Rie Yokoi, Takeharu Kato, Isao Tanaka, Ayako Yamamoto, Kimitoshi Murase, Yosuke Hamasaiki, Yoshitaka Ehara, Mitsuru Itoh   +9 more
wiley   +1 more source

Triggered Ferroelectricity in HfO₂ From Hybrid Phonons and Higher-Order Dynamical Charges. [PDF]

Adv Mater
Jung S, Birol T.
europepmc   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Robust room-temperature ferroelectricity in the wide-bandgap semiconductor Ga₂O₃. [PDF]

Sci Adv
Shen J, Fu Io W, Liu C, Wen Y, Wu H, Cao Y, Yang Y, Dong D, Zhang F, Cai S, Ren W, Xing X, Zhang Y, Wu Z, Hao J.   +14 more
europepmc   +1 more source

Accelerating Discovery of Organic Molecular Crystals via Materials Informatics and Autonomous Experiments

Advanced Intelligent Discovery, EarlyView.
Materials informatics and autonomous experimentation are transforming the discovery of organic molecular crystals. This review presents an integrated molecule–crystal–function–optimization workflow combining machine learning, crystal structure prediction, and Bayesian optimization with robotic platforms.
Takuya Taniguchi, Kazuki Ishizaki, Ryo Fukasawa   +2 more
wiley   +1 more source

Approaching theoretical polarization limit in HfZrO2/HfLaO2 multilayers. [PDF]

Nat Commun
Shi S, Xi H, Su H, Sawyerr F, Liu Z, Zhang Z, Huangfu G, Niu J, Sun Y, Yang P, Gong X, Chen W, Tsymbal EY, Yan X, Tian H, Cao T, Chen J.   +16 more
europepmc   +1 more source

Smart Bioinspired Material‐Based Actuators: Current Challenges and Prospects

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
This work gathers, in a review style, an extensive and comprehensive literature overview on the development of autonomous actuators based on synthetic materials, bringing together valuable knowledge from several studies. Furthermore, the article identifies the fundamental principles of actuation mechanisms and defines key parameters to address the size
Alejandro Palacios, Léon Chiriatti, Simon Poppinga, Thomas Speck, Vincent Le Houérou   +4 more
wiley   +1 more source

Electronically Driven Magnetoelectric Coupling in Co/La:Hf_0.5Zr_0.5O₂ Heterostructures for Energy-Efficient Neuromorphic Computing. [PDF]

ACS Appl Mater Interfaces
Quintana A, Magen C, Ghiasabadi Farahani M, Dong W, Zou J, Dix N, Ma Z, Menéndez E, Foerster M, Niño MA, Cazorla C, Sort J, Sánchez F, Fina I.   +13 more
europepmc   +1 more source

Ferroelectric ordering in ferroelectric materials with mesoscopic disorder

Ferroelectric ordering in ferroelectric materials with mesoscopic disorder
2009 【要旨】
openaire  

Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley   +1 more source