Results 81 to 90 of about 9,032,815 (373)

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

Advanced Functional Materials, EarlyView.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert, Ali Barooni, Benjamin Gregory, Paul Malinowski, Anirudh Tenneti, Sonia Hasko, Brenan Palazzolo, Jeffrey W Hodgson, Brendan Faeth, Patrick M. Woodward, Kyle M. Shen, Andrej Singer, Maryam Ghazisaeidi, Salva Salmani‐Rezaie, Darrell G. Schlom, Kaveh Ahadi   +15 more
wiley   +1 more source

Orientational Ordering in Spatially Disordered Dipolar Systems

, 1995
This letter addresses basic questions concerning ferroelectric order in positionally disordered dipolar materials. Three models distinguished by dipole vectors which have one, two or three components are studied by computer simulation.
B. Bergersen, B. E. Vugmeister, B. Groh, B. Mertens, D. Wei, D. Wei, G. Ayton, G. N. Patey, H-J. Xu, H-J. Xu, H. Zhang, J. J. Weis, J. M. Luttinger, J. P. Hansen, K. Binder, M. A. Zaluska-Kotur, M. J. P. Gingras, M. J. P. Gingras, P. G. Kusalik, R. Tao, S. W. de Leeuw, U. T. Höchli, W. Luo   +22 more
core   +1 more source

Functional Materials for Environmental Energy Harvesting in Smart Agriculture via Triboelectric Nanogenerators

Advanced Functional Materials, EarlyView.
This review explores functional and responsive materials for triboelectric nanogenerators (TENGs) in sustainable smart agriculture. It examines how particulate contamination and dirt affect charge transfer and efficiency. Environmental challenges and strategies to enhance durability and responsiveness are outlined, including active functional layers ...
Rafael R. A. Silva, Giulio Fatti, Emanuel Carlos, Guilherme Ferreira, Sumita Goswami, Suman Nandy, Luiz H. C. Mattoso, Elvira Fortunato, Caio G. Otoni, Rodrigo Martins   +9 more
wiley   +1 more source

Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

Nature Communications, 2022
Tunability of ferroelectric domain structure is significant in ferroelectric materials. Here, the authors present in-plane ferroelectricity in 2D Bi2TeO5 in which the ferroelectric domain size and shape can be continuously tuned by the Bi/Te ratio.
Mengjiao Han, Cong Wang, Kangdi Niu, Qishuo Yang, Chuanshou Wang, Xi Zhang, Junfeng Dai, Yujia Wang, Xiuliang Ma, Junling Wang, Lixing Kang, Wei Ji, Junhao Lin   +12 more
doaj   +1 more source

Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7

, 2019
Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric polarization.
Autieri, Carmine, Barone, Paolo, Picozzi, Silvia, Slawinska, Jagoda   +3 more
core   +1 more source

Comparative first-principles studies of prototypical ferroelectric materials by LDA, GGA, and SCAN meta-GGA [PDF]

, 2017
Originating from a broken spatial inversion symmetry, ferroelectricity is a functionality of materials with an electric dipole that can be switched by external electric fields.
Yubo Zhang, Jianwei Sun, J. Perdew, Xifan Wu   +3 more
semanticscholar   +1 more source

Thermal Phase‐Modulation of Thickness‐Dependent CVD‐Grown 2D In2Se3

Advanced Functional Materials, EarlyView.
A comprehensive study of CVD‐grown 2D In2Se3 reveals a distinct thickness‐dependent phase landscape and a reversible, thermally driven transformation between β″ and β* variants. In situ TEM electron diffraction and Raman spectroscopy reveal structural dynamics, while the structural invariance of the α‐phase in ultrathin regimes highlights its stability—
Dasun P. W. Guruge, Zhenhuan Chen, Joseph F. S. Fernando, Chao Zhang, Liangzhi Kou, Konstantin L. Firestein, Dmitri V. Golberg   +6 more
wiley   +1 more source

Coupled Ferroelectric–Photoelectrochemical in Water Reduction Over BiFeO3 Thin Film Heterostructure Modulated by Rare‐Earth Doping

Advanced Functional Materials, EarlyView.
Gd‐doped BFO (BGFO) exhibits a ∼2‐order reduction in leakage current owing to its lowest content of oxygen vacancies. This leads to a ∼2.5‐fold increase in remnant polarization. These improvements in BGFO effectively boost charge separation and transportation, resulting in the greatest incident photon‐to‐current efficiency of 12.9 ± 0.73% and a ∼1.5 ...
Ming‐Wei Chu, Narong Chanlek, Cheng‐Sao Chen, Pin‐Yi Chen, Kuei‐Chih Feng, Chi‐Shun Tu, Chang Fu Dee, Wei Sea Chang   +7 more
wiley   +1 more source