Results 91 to 100 of about 8,506,464 (324)

Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?

open access: yesAdvanced Functional Materials, EarlyView.
This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy   +9 more
wiley   +1 more source

Incipient ferroelectricity in methylammonium lead halide perovskites

open access: yesCommunications Materials
Lead halide perovskites are promising materials for optoelectronic applications. Ferroelectricity is often considered as a phenomenon that improves their properties.
Alexei A. Bokov   +2 more
doaj   +1 more source

Electric-field switchable magnetization via the Dzyaloshinskii-Moriya interaction: FeTiO_3 versus BiFeO_3

open access: yes, 2008
In this article we review and discuss a mechanism for coupling between electric polarization and magnetization that can ultimately lead to electric-field switchable magnetization.
Bradley C J   +12 more
core   +1 more source

Charge Transport in Ternary Charge‐Transfer Solid Solution Single Crystals

open access: yesAdvanced Functional Materials, EarlyView.
This study deconvolutes the roles of indirect (superexchange) and direct electronic coupling on charge transport in single crystals of an organic charge‐transfer molecular semiconductor (OSC). This model system elegantly demonstrates that structural defects introduced by chemical dopants play a significant role in the electronic performance ...
Jonathan C. Novak   +7 more
wiley   +1 more source

The Effects of a Non-Ferroelectric Slab on the Polarization and the Susceptibility of the Ferroelectric Multilayer

open access: yes, 2002
The polarization and the susceptibility of a ferroelectric multilayer with a non-ferroelectric slab are investigated within the framework of transverse Ising model with a four-spin interaction term. The effect of the thickness and the position of the non-
Christen   +28 more
core   +1 more source

Enhancing Synaptic Plasticity and Multistate Retention of Organic Neuromorphic Devices Using Anion‐Excessive Gel Electrolyte

open access: yesAdvanced Functional Materials, EarlyView.
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won   +3 more
wiley   +1 more source

Ferroelectric Nanomaterials for Energy Harvesting and Self‐Powered Sensing Applications

open access: yesAdvanced Sensor Research
The rapid development of the Internet of Things has introduced new challenges for miniaturized, highly integrated energy harvesters and sensors, promoting the exploration of various novel nanomaterials. Ferroelectric nanomaterials, characterized by large
Xiang Yu   +6 more
doaj   +1 more source

Multifarious transparent glass nanocrystal composites

open access: yes, 2010
Glasses comprising well known ferroelectric crystalline phases have been a subject of curious investigation from the point of view of exploiting these composites for dielectric, pyroelectric, ferroelectric, electro and non-linear optical devices ...
Ahamad, M.N.   +5 more
core  

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji   +9 more
wiley   +1 more source

Aluminum-Nitride-Based Semiconductors: Growth Processes, Ferroelectric Properties, and Performance Enhancements

open access: yesInorganics
Aluminum nitride (AlN)-based ferroelectric films offer significant advantages, including compatibility with CMOS back-end processes, potential for sustainable miniaturization, and intrinsic stability in the ferroelectric phase.
Luyi Wang   +5 more
doaj   +1 more source

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