Results 71 to 80 of about 9,574,825 (357)

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2

open access: yesCommunications Physics, 2022
HfO2-based ferroelectric materials have immense technological potential and so significant attention has been given to improve the ferroelectric properties at low-thickness.
Nikitas Siannas   +7 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene

open access: yesAdvanced Functional Materials, EarlyView.
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus   +8 more
wiley   +1 more source

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

open access: yesAIP Advances, 2016
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility.
S. Riedel, P. Polakowski, J. Müller
doaj   +1 more source

Nanoscale interfacial electroactivity in PVDF/PVDF-TrFE blended films with enhanced dielectric and ferroelectric properties

open access: yes, 2017
The typical limitations of ferroelectric polymers like poly(vinylidene fluoride) (PVDF) – low crystallinity and indirect ferroelectric β-phase crystallization – and poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) – high materials and processing ...
Nan Meng   +4 more
semanticscholar   +1 more source

Electrical Properties of Un-doped and Doped EuTiO3-based Perovskites [PDF]

open access: yes, 2013
Un-doped and doped EuTiO3 (ET) ceramics were prepared in 5%H2/95%N2 and N2 atmospheres at various temperatures (1350, 1450 and 1500 oC). For un-doped ET, higher pellet density (above 90%) and larger grain sized ceramics were obtained from the higher ...
WANG, JING
core  

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Low temperature growth of epitaxial ferroelectric BaTiO3

open access: yesAPL Materials, 2021
BaTiO3 exhibits several functional properties, such as high dielectric constant, large Pockels coefficient, and strong ferroelectricity/piezoelectricity.
Yeong Jae Shin   +4 more
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

open access: yesAdvanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone   +8 more
wiley   +1 more source

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