Results 51 to 60 of about 9,574,825 (357)

Use of the solvent chemistry for the control of the critical thickness of PbTiO3 ultrathin films [PDF]

, 2010
The preparation of high-quality ferroelectric PbTiO3-based ultrathin films by chemical solution deposition. using a diol-based sol-gel method, has proved to be successful.
Fernandez, R., Ricote, J., Holgado, S., Calzada, M. L., Huang, Zhaorong   +4 more
core   +1 more source

Encyclopedia of 2D β′‐In2Se3 Growth Using Chemical Vapor Deposition: The Effects of Synthesis Parameters Onto Material Quality

Advanced Engineering Materials, EarlyView.
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge, P. Sanju S. Panawala, Joseph F. S. Fernando, Zhenhuan Chen, Chao Zhang, Dong‐Chen Qi, Liangzhi Kou, Konstantin L. Firestein, Dmitri V. Golberg   +8 more
wiley   +1 more source

Research progress on ferroelectric catalytic materials for antimicrobials

工程科学学报
Research and development of antimicrobial technology are critical for safeguarding human life and health. Ferroelectric materials, materials with spontaneous polarization, can adjust their direction of spontaneous polarization in response to an external ...
Yan ZHANG, Junling CHE, Yanmin JIA
doaj   +1 more source

A Dislocation Perspective on Strength and Toughness in Ceramics

Advanced Engineering Materials, EarlyView.
Dislocations in ceramics enjoy a long but yet under‐appreciated history. The three research waves for dislocations in ceramics highlight the topic evolution over the last 90 years. This review focuses on the impact of dislocation on strength and toughness in ceramics.
Xufei Fang
wiley   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

Some lead-free ceramics of ferroelectric and photoelectrochemical applications.

Materials and Devices, 2017
The main ferroelectric materials are lead-based which cause serious environmental problem. Then, to develop environment friendly materials, lead-free ceramics derived from BaTiO3 were found to be interesting owing to their attractive ferroelectric ...
Kamel TAÏBI
doaj   +2 more sources

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing

, 2023
With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects.
Zhongyang Liu, Zhongyang Liu (1863094), Mingjie Li (754176), Mingjie Li, Yingtao Ding (13144818), Xiao Liu, Zhiming Chen, Xiao Liu (65413), Zhifang Liu, Zhifang Liu (439137), Yilin Sun, Yingtao Ding, Yilin Sun (793391), Zhiming Chen (1313025)   +13 more
core   +1 more source

Emergent Topological Magnons and Thermal Hall Effect in 2D Filling‐Enforced Fully Compensated Ferrimagnets

Advanced Functional Materials, EarlyView.
Schematic illustration of ferroelectric‐intercalation‐driven transitions in magnetic configurations and magnonic topological phases, together with the symmetry relations of magnonic Berry curvature. ABSTRACT Magnons in collinear magnets with vanishing net magnetization offer unique advantages for spin transport, including ultrafast dynamics and ...
Yingxi Bai, Bo Yuan, Zhenzhou Guo, Jian Zhang, Ying Dai, Baibiao Huang, Xiaotian Wang, Chengwang Niu, Gang Zhang   +8 more
wiley   +1 more source

Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance

Nanomaterials, 2021
It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors.
Maksim A. Pavlenko, Yuri A. Tikhonov, Anna G. Razumnaya, Valerii M. Vinokur, Igor A. Lukyanchuk   +4 more
doaj   +1 more source