Results 51 to 60 of about 11,325 (265)

Strong Lead‐Free Bioinspired Piezoceramics for Durable Energy Transducers

Advanced Functional Materials, EarlyView.
We fabricated brick‐and‐mortar lead‐free piezoceramics with Bi0.5Na0.5TiO3 monocrystal platelets as bricks and amorphous silica as mortar. The alignment of the bricks and the presence of the amorphous silica led to anisotropic residual stresses. These residual stresses increase the samples toughness, strength and durability while the brick alignment ...
Ruxue Yang, Temesgen Tadeyos Zate, Peiren Wang, Soumyajit Mojumder, Elo Overgaard Mogensen, Oriol Gavalda‐Diaz, Zihe Li, Shitong Zhou, Ajeet Kumar, James Roscow, Hamideh Khanbareh, Astri Bjørnetun Haugen, Florian Bouville   +12 more
wiley   +1 more source

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source

Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices

Nature Communications
The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3.
Yuyang Wu, Tianjiao Zhang, Deping Guo, Bicheng Li, Ke Pei, Wenbin You, Yiqian Du, Wanchen Xing, Yuxiang Lai, Wei Ji, Yuda Zhao, Renchao Che   +11 more
doaj   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Unusual Temperature‐Enhanced Bulk Photovoltaic Effect Beyond the Centrosymmetric Phase in CuCrP2S6 van der Waals Crystals

Advanced Functional Materials, EarlyView.
Contrary to conventional expectations, the bulk photovoltaic effect in CuCrP2S6 is enhanced rather than suppressed upon transitioning into the crystallographically centrosymmetric phase. Dynamic Cu‐ion disorder creates transient polar states, which substantially amplifies zero‐bias photocurrent (shift‐current) generation, establishing dynamic symmetry ...
Ryoga Murata, Takao Sasagawa
wiley   +1 more source

Effects of plasma gas interface processing on ferroelectric property of TiN/Hf0.5Zr0.5O2/TiN ferroelectric device

High Temperature Materials and Processes
HZO ferroelectric capacitor device have sparked considerable interest among researchers due to their high-speed storage capability and low-power consumption characteristics.
Wang Zhenhua, Hou Jingwen, Li Zewen, Wang Yuchan, Wang Fang, Zhang Bao, Li QianHui, Xu ChuHeng, Gong Xin, Wang Qi, Han Yemei, Hu Kai, Zhang Kailiang   +12 more
doaj   +1 more source

Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS

Advanced Functional Materials, EarlyView.
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Kaito Kanahashi, Tomoaki Kameda, Katsunori Wakabayashi, Redhwan A Moqbel, Ting‐Hsuan Wu, Kung‐Hsuan Lin, Yosuke Ogawa, Eiji Nishibori, Keisuke Shinokita, Kazunari Matsuda, Jui‐Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio   +17 more
wiley   +1 more source

The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation

npj Flexible Electronics
As the core component of ferroelectric memories, HfO2-based ferroelectric thin films play a crucial role in achieving their excellent storage performance.
Jinglin Pang, Tianpeng Duan, Min Liao, Limei Jiang, Yichun Zhou, Qiong Yang, Jiajia Liao, Jie Jiang   +7 more
doaj   +1 more source