Results 31 to 40 of about 11,325 (265)

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Research progress on ferroelectric catalytic materials for antimicrobials

open access: yes工程科学学报
Research and development of antimicrobial technology are critical for safeguarding human life and health. Ferroelectric materials, materials with spontaneous polarization, can adjust their direction of spontaneous polarization in response to an external ...
Yan ZHANG, Junling CHE, Yanmin JIA
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene

open access: yesAdvanced Functional Materials, EarlyView.
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus   +8 more
wiley   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Quantifying Subsurface Weak in‐Plane Magnetization of Mixed Phase BiFeO3 by Scanning Nitrogen Vacancy Magnetometry

open access: yesAdvanced Functional Materials, EarlyView.
We use scanning nitrogen vacancy magnetometry to directly image the weak in‐plane magnetic moments in mixed phase BiFeO3 at the nanoscale and quantify the local magnetic moments to be 18.8±2.0 μB/nm2 in the rhombohedral‐like phase and 1.5±0.6 μB/nm2 in the well‐known non‐magnetic tetragonal‐like phase.
Lei Wang   +14 more
wiley   +1 more source

Tailoring the Functional Properties of Ferroelectric Perovskite Thin Films: Mechanisms of Dielectric and Photoelectrochemical Enhancement

open access: yesCrystals
Various types of strain, as well as chemical pressure induced by dopants, can effectively tailor the performance of perovskite thin films, including their optical, electrical or photoelectrochemical properties.
Ioan-Mihail Ghitiu   +2 more
doaj   +1 more source

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

open access: yesNano Convergence, 2023
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as
Jaewook Lee   +7 more
doaj   +1 more source

Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance

open access: yesNanomaterials, 2021
It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors.
Maksim A. Pavlenko   +4 more
doaj   +1 more source

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