Results 11 to 20 of about 9,574,825 (357)
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini +11 more
doaj +2 more sources
Two-dimensional (2D) ferroelectric materials with robust polarization down to atomic thicknesses provide novel building blocks for functional heterostructures.
Yabing Du +5 more
doaj +1 more source
Properties of Ferroelectric Ice [PDF]
Sector of Nuclear Science, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Naka-gun, Tokai, 319-1195, Japan. Department of Chemistry, Kyushu University, 6-10-1 Hakozaki, Higashu-ku, Fukuoka 812-8581, Japan. Institute for Solid State Physics, University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan Quantum Condensed Matter Division ...
Hiroshi Fukazawa +7 more
openaire +1 more source
Some lead-free ceramics of ferroelectric andphotoelectrochemical applications
The main ferroelectric materials are lead-based which cause serious environmental problem. Then, to develop environment friendly materials, lead-free ceramics derived from BaTiO3 were found to be interesting owing to their attractive ferroelectric ...
N. Bensemma +3 more
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Improvement of Ferroelectricity with Two-Dimensional Enwrapping Structure
The effect of the layered InSe intercalation structure on the ferroelectric properties of HfO2 was investigated. At low crystallization temperatures, the ferroelectric phase is formed more easily.
Xi Wu, Ran Jiang
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Enhancing properties of lead-free ferroelectric BaTiO3 through doping
The substitution on either the A-or B -site of ferroelectric perovskites by aliovalent elements has a profound influence on their properties. Donor doping “softens” ferroelectrics, whereas acceptor doping “hardens” them. The charge compensation mechanisms
Zechao Li +3 more
semanticscholar +1 more source
Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2
Ferroelectric hafnium oxide thin films—the most promising materials in microelectronics’ non-volatile memory—exhibit both unconventional ferroelectricity and unconventional piezoelectricity.
Anastasia Chouprik +5 more
doaj +1 more source
Ferroelectrics usually exhibit temperature‐triggered structural changes, which play crucial roles in controlling their physical properties. However, although light is very striking as a non‐contact, non‐destructive, and remotely controlled external ...
Wei‐Qiang Liao +6 more
doaj +1 more source
Bandgap modulation and phase boundary region of multiferroic Gd, Co co-doped BiFeO3 thin film
Ferroelectric polarization is a crucial factor to induce photovoltaic effect in ferroelectric materials. Here, a novel modulation of bandgap by Gd and Co co-doped BFO is found for a polycrystalline Bi0.9Gd0.1Fe0.85Co0.15O3 thin film prepared by the sol ...
Yuanyuan Xu, Chaoyong Deng, Xu Wang
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Fabrication of continuous ultrathin ferroelectric films by chemical solution deposition methods [PDF]
The integration of ferroelectrics in nanodevices requires firstly the preparation of high-quality ultrathin films. Chemical solution deposition is considered a rapid and cost-effective technique for preparing high-quality oxide films, but one that has
Fernandez, R. +5 more
core +1 more source

