Results 231 to 240 of about 8,506,464 (324)

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Tuning Ferroelectricity in PVDF-TrFE through Thermal Treatment-Dependent Crystal Orientation. [PDF]

ACS Omega
Li L, Lin F, Meng X, Qi Z, Xiao H, Liu J, Liu Q.   +6 more
europepmc   +1 more source

Reconfigurable Combinational Logic Operations Using Triple‐Gated Feedback Field‐Effect Transistors for Logic‐In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this study, we demonstrated that four distinct combinational logic operations can be reconfigured and executed within a single circuit structure, where each reconfigurable logic‐in‐memory cell dynamically adapts its function. The reconfigurable logic‐in‐memory cell, composed of triple‐gated feedback field‐effect transistors, performs NOT, AND, OR ...
Dongki Kim, Yunwoo Shin, Hyojoo Heo, Kyoungah Cho, Sangsig Kim   +4 more
wiley   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

Advanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros‐Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou   +13 more
wiley   +1 more source

Millable polyurethane/cellulose acetate/nanohydroxyapatite composite film as a flexible ferro-piezoelectric nanogenerator for innovative applications in physiological motion sensing. [PDF]

RSC Adv
Melepalliyalil G, Mathew MM, Varghese S, Panicker UG.   +3 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Coexistence of ferroelectricity and altermagnetism in wurtzite vanadium oxide: a first-principles study. [PDF]

RSC Adv
Zaman A, Alrefaee SH, Shahid H, Orlova T, Alrubayyi A, Alreshidi R, Tirth V, Algahtani A.   +7 more
europepmc   +1 more source

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Advanced Electronic Materials, EarlyView.
A flipped electronically reconfigurable STO/LAO freestanding membrane is demonstrated and integrated with various host platforms via controlled transfer. Using ultra‐low‐voltage electron‐beam lithography, conductive nanostructures are created at the buried STO/LAO interface. This novel approach enables heterogeneous integration of flipped complex oxide
Ruiqi Sun, Ahmed Omran, Muqing Yu, Kyoungjun Lee, Keeyong Lee, Soli Sung, Sangho Oh, Patrick irvin, Jeremy Levy, Chang‐Beom Eom   +9 more
wiley   +1 more source

Dynamic Control of Crystallographic Orientation and Multiferroicity in Epitaxial YCrO₃ Films via Oxygen Pressure Modulation. [PDF]

ACS Appl Mater Interfaces
Tan J, Wang W, Lai H, Liao W, Sha X, Song Y, Zhu Y, Guo H, Zheng C, Wang W, Shen J.   +10 more
europepmc   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source