Enhanced superconductivity and coexisting ferroelectricity at oxide interfaces. [PDF]
Zhang M +5 more
europepmc +1 more source
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley +1 more source
Role of the channel on the memory window of HfZrO<sub>x</sub> ferroelectric field-effect transistors with p-type Si-doped InZnO<sub>x</sub> channel. [PDF]
Park H, Lim S, Lee S, Lee JW, Woo J.
europepmc +1 more source
Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan +21 more
wiley +1 more source
Intrinsic ferroelectric elastomers with ultrahigh Curie temperature and fast polarization switching. [PDF]
Wang Y +7 more
europepmc +1 more source
Emerging 2D Ferroelectric Semiconductors: From Fundamentals to Advanced Device Applications. [PDF]
Chi M +6 more
europepmc +1 more source
Performance Enhancement of Piezoelectric Single Crystals Through Combination of Alternating-Current Poling and Direct-Current Poling. [PDF]
Zheng C +6 more
europepmc +1 more source
Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. [PDF]
Li E +9 more
europepmc +1 more source
Correction: Zhang et al. Modulation of Ferroelectric and Optical Properties of La/Co-Doped KNbO3 Ceramics. Nanomaterials 2021, 11, 2273. [PDF]
Zhang X +10 more
europepmc +1 more source

