Results 101 to 110 of about 204,595 (365)

An Effective Model of Magnetoelectricity in Multiferroics $RMn_2O_5$

, 2007
An effective model is developed to explain the phase diagram and the mechanism of magnetoelectric coupling in multiferroics, $RMn_2O_5$. We show that the nature of magnetoelectric coupling in $RMn_2O_5$ is a coupling between two Ising-type orders, namely,
Bak P., Chen Fang, Fang C. Hu J., Harris A. B., Jangping Hu, Radulov I. Lovchinov V. Daszkiewicz M., Shender E. F., Tsvelik A. M.   +7 more
core   +1 more source

Switchable tribology of ferroelectrics

Nature Communications
AbstractSwitchable tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a nanoscale scanning probe—down domains have lower friction coefficients and show slower wear rates than up domains and can be used as ...
Cho, Seongwoo, Gaponenko, Iaroslav, Cordero-Edwards, Kumara, Barceló-Mercader, Jordi, Arias, Irene, Kim, Daeho, Lichtensteiger, Céline, Yeom, Jiwon, Musy, Loïc, Kim, Hyunji, Han, Seung Min, Catalan, Gustau, Paruch, Patrycja, Hong, Seungbum   +13 more
openaire   +8 more sources

Enhanced Electromechanical Response in 1D Hybrid Perovskites: Coexistence of Normal and Relaxor Ferroelectric Phases

Advanced Functional Materials, EarlyView.
The dynamic polarization reversal of coexisting normal and relaxor ferroelectrics in 1D TMAPbI₃ (tetramethylammonium, TMA) is deciphered through combined experimental and theoretical approaches. By bridging atomic‐scale motion, macroscopic polarization switching, and depolarization effects, a universal methodology is established to engineer next ...
Chen Xue, Masaru Fujibayashi, Hengming Huang, Chisato Kato, Katsuya Ichihashi, Jun Manabe, Sadafumi Nishihara, Xiao‐Ming Ren, Takayoshi Nakamura   +8 more
wiley   +1 more source

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Nature Communications, 2018
High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two ...
H. Wang, Z. R. Liu, H. Y. Yoong, T. R. Paudel, J. X. Xiao, R. Guo, W. N. Lin, P. Yang, J. Wang, G. M. Chow, T. Venkatesan, E. Y. Tsymbal, H. Tian, J. S. Chen   +13 more
doaj   +1 more source

Polar magnetic oxides from chemical ordering: A new class of multiferroics

APL Materials, 2020
Combining ferroelectricity and magnetism in the same material remains a challenge because it involves complex crystal chemistry and stringent symmetry requirements. In conventional ferroelectrics, the polarization arises from the second-order Jahn–Teller
Ravi Shankar P N, Swarnamayee Mishra, Sundaresan Athinarayanan   +2 more
doaj   +1 more source

Evidence of ferroelectric behaviour in CaCu3Ti4O12 thin films deposited by RF-sputtering [PDF]

Processing and Application of Ceramics, 2019
The origin of abnormal ferroelectric and unusual piezoelectricity in the polycrystalline CaCu3Ti4O12 (CCTO) thin films deposited by RF-sputtering on Pt/Ti/SiO2/Si (100) substrates was explored.
Cesar R. Foschini, Bruno Hangai, Pedro Paulo Ortega, Elson Longo, Mário Cilense, Alexandre Z. Simões   +5 more
doaj   +1 more source

Large ferroelectric polarization in the new double perovskite NaLaMnWO$_{6}$ induced by non-polar instabilities

, 2011
Based on density functional theory calculations and group theoretical analysis, we have studied NaLaMnWO$_{6}$ compound which has been recently synthesized [Phys. Rev.
A. Stroppa, Anderson, Barone, Benedek, Bousquet, Cheong, Dove, Dudarev, Ederer, Etxebarria, Fennie, Fukushima, Gajek, Ghosez, Giovannetti, Glazer, Hur, Ikeda, Imada, J. M. Perez-Mato, Kimura, Kimura, King, King, King-Smith, Knapp, Kresse, Kroumova, Lawes, Levanyuk, Lufaso, Millange, Mostovoy, Neaton, Orobengoa, Perdew, Perez-Mato, Perez-Mato, Picozzi, Ramesh, Resta, Rodriguez-Carvajal, S. Picozzi, Shannon, Spaldin, Stroppa, Stroppa, T. Fukushima, van Aken, Wang, Wang, Woodward   +51 more
core   +1 more source

Optical Control of Ferroelectric Imprint in BiFeO3

Advanced Functional Materials, EarlyView.
Above‐bandgap irradiation at room temperature enables on‐demand optical control of defect‐driven built‐in electric fields in BiFeO₃ thin films, fabricated via scalable, chemical spray pyrolysis. These fields, otherwise “frozen‐in,” can cause severe device degradation, including non‐switchable polarization, dead layers near interfaces, and polarization ...
Haoze Zhang, Malur C. Nagashree, Richard F. Webster, Zhipeng Wang, Xiaoran Zheng, Suresh D. Kulkarni, Rajendra B. Venkataramana, Jan Seidel, Pankaj Sharma   +8 more
wiley   +1 more source

Endowing Ferroelectric Properties of Tetragonal Lysozyme Crystals through C₆₀ Doping

Crystals
The inherent nonpolarity of tetragonal lysozyme crystals excludes a ferroelectricity response. Herein, we present a demonstration of achieving measurable ferroelectricity in tetragonal lysozyme crystals through C60 doping. Ferroelectric characterizations
Renbin Zhou, Xuejiao Liu, Weihong Guo, Dachuan Yin   +3 more
doaj   +1 more source

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Advanced Electronic Materials, 2023
The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging.
Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim   +8 more
doaj   +1 more source