Results 101 to 110 of about 191,721 (336)
Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing
Advanced Functional Materials, EarlyView.This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki +7 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell +5 more
wiley +1 more source
Advanced Functional Materials, EarlyView.It is shown that interfaces between organic and inorganic layers govern long‐range stacking disorder and in‐plane anisotropy in 2D metal‐halide perovskites. By comparing single‐cation AB‐AB and ordered mixed‐cation ABCD‐ABCD stackings, SCXRD reveals enhanced mosaicity, while optics confirm high birefringence.
Yixuan Dou +6 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
AIP Advances, 2011 Multiferroic materials such as YMnO3, which uniquely exhibit ferroelectricity and magnetism simultaneously, have been extensively studied for spintronic device applications. However, the origin of multiferroicity remains poorly understood. In this study,
Sheng-Hsu Liu +9 more
doaj +1 more source
Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?
Advanced Functional Materials, EarlyView.This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy +9 more
wiley +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
Advanced Functional Materials, EarlyView.In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Thermodynamic Theory of Proximity Ferroelectricity
Physical Review XProximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a nonferroelectric polar material becomes a ferroelectric one by interfacing with a thin ferroelectric layer.
Eugene A. Eliseev +4 more
doaj +1 more source
Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets
Advanced Science, 2019 Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics.
Yejing Dai +6 more
doaj +1 more source