Results 131 to 140 of about 191,721 (336)

Calculation of the Spontaneous Polarization and the Dielectric Constant for the Ferroelectric N(CH3)4HSO4 Using the Mean Field Model

open access: yesHigh Temperature Materials and Processes, 2017
The temperature dependences of the spontaneous polarization and the dielectric constant (susceptibility) are calculated using the mean field model for the ferroelectric N(CH3)4HSO4.
Yurtseven H., Celik M., Karacali H.
doaj   +1 more source

Artificial Intelligence‐Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

open access: yesAdvanced Materials, EarlyView.
AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll   +19 more
wiley   +1 more source

Light‐Driven Reconfigurable Logic in a Monolithic Perovskite Device via Nonlinear Photoresponse Switching

open access: yesAdvanced Materials, EarlyView.
This study demonstrates a monolithic perovskite OELG device that performs all eight logic operations, including XOR and XNOR, without external bias. Enabled by trap‐engineered MAPbI3:PLL and dual photogates, it achieves reconfigurable logic and parallel decoding of amplitude–frequency signals, supporting scenario‐configured logic‐level separation for ...
Dante Ahn   +13 more
wiley   +1 more source

Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon‐Enhanced Sum‐Frequency Microscopy

open access: yesAdvanced Materials, EarlyView.
A nonlinear optical microscopy technique is introduced that enables rapid imaging of hexagonal boron nitride monolayers, which are usually optically invisible. The nonlinear mixing of mid‐infrared and visible laser pulses enables full crystallographic imaging through phase‐resolved sum‐frequency generation microscopy, where the resonant excitation of a
Niclas S. Mueller   +15 more
wiley   +1 more source

Ab initio Determination of Total-Energy Surfaces for Distortions of Ferroelectric Perovskite Oxides [PDF]

open access: green, 2004
Takatoshi Hashimoto   +5 more
openalex   +1 more source

Breaking the synchrony of sliding ferroelectricity and sliding energy barrier

open access: yesnpj Computational Materials
Two-dimensional (2D) materials demonstrate exceptional sliding ferroelectricity, owing to their facilitated interface charge transfer and controllable interlayer sliding.
Qihao Liang, Huasong Qin, Yilun Liu
doaj   +1 more source

Chip‐Scale Graphene/IGZO Cold Source FET Array Enabling Sub‐60 mV dec−1 Super‐Steep Subthreshold Swing

open access: yesAdvanced Materials, EarlyView.
Super‐steep subthreshold swing (SS) below 60 mV dec−1 is demonstrated in graphene/IGZO cold source transistor arrays. Linear density of states with Dirac cone in graphene suppressed the Boltzmann thermal tail, while high‐k HfO2 dielectric having small body factor enhanced gating efficiency, hereby further reducing SS. An average SS of ≈46.4 mV dec−1 is
Seyoung Oh   +13 more
wiley   +1 more source

Sculpting the Future of Bone: The Evolution of Absorbable Materials in Orthopedics

open access: yesAdvanced Materials, EarlyView.
This review summarizes the current status of polymeric, ceramic, and metallic absorbable materials in orthopedic applications, and highlights several innovative strategies designed to enhance mechanical performance, control degradation, and promote bioactivity. We also discuss the progress and translational potential of absorbable materials in treating
Zhao Wang   +13 more
wiley   +1 more source

Perovskite solar cells with ferroelectricity

open access: yesInformation & Functional Materials
Halide perovskites show excellent optoelectronic properties for solar cell application. Notably, perovskite crystalline structures have been widely reported to deliver superior ferroelectric properties.
Tie Zhang   +4 more
doaj   +1 more source

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