Ga-substitution effects on the improper ferroelectric phase transition of Ca8[AlO2]12(MoO4)2
The aluminum-sodalite-type oxide, Ca8[AlO2]12(MoO4)2, shows an improper ferroelectricity below a ferroelectric phase transition temperature around 630 K. Here we present effects of a Ga-substitution for Al on ferroelectric properties of Ca8[AlO2]12(MoO4)
Koji Maruyama+3 more
doaj
High Performance Room Temperature Multiferroic Properties of w‐MnSe Altermagnet
Using first‐principles calculations, for the first time the Altermagneto‐Ferroelectric Coupling Effect (AFCE) is proposed, which enables control of both electric polarization and spin splitting in the band structure due to polyhedral rotations. This uncovers robust multiferroicity in wurtzite MnSe at room temperature, offering an exciting route for ...
Djamel Bezzerga, Imran Khan, Jisang Hong
wiley +1 more source
Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets
Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics.
Yejing Dai+6 more
doaj +1 more source
Defects in Inorganic Mechanoluminescent Phosphors: Insights and Impacts
Mechanoluminescence is attracting more attention recently, and defect dominates mechanoluminescence performances. Investigating how defects work in the mechanoluminescence process is crucial for elucidating its complex luminescence mechanism. This review aims to emphasize the fundamental role of defects in mechanoluminescence, which offers an ...
Wenhao Li+3 more
wiley +1 more source
Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking.
Out-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices.
Jun Xiao+11 more
semanticscholar +1 more source
Thermodynamic Theory of Proximity Ferroelectricity
Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a nonferroelectric polar material becomes a ferroelectric one by interfacing with a thin ferroelectric layer.
Eugene A. Eliseev+4 more
doaj +1 more source
Twin Domains in Organometallic Halide Perovskite Thin-Films
The perovskite is a class of material with crystalline structure similar to CaTiO3. In recent years, the organic-inorganic hybrid metallic halide perovskite has been widely investigated as a promising material for a new generation photovoltaic device ...
Wei Liu+8 more
doaj +1 more source
Modulating Oxide‐Based Quantum Materials by Ion Implantation
This review highlights how ion implantation, a well developed chip‐technology, enables targeted modulation of oxide‐based quantum materials. This includes tuning of metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and induced lattice strain. Abstract Ion implantation has emerged as a powerful tool
Andreas Herklotz+2 more
wiley +1 more source
Near‐Field Optical Detection of Defect‐Stabilized Metallic Islands at the Verwey Transition in Fe3O4
Nanoscale metallic islands emerging across the Verwey transition in thin films of Fe3O4 are imaged using near‐field optical microscopy from mid‐infrared to terahertz frequencies. Recurring across thermal cycles, these disorder‐stabilized islands exhibit distinct transition temperatures.
Kajal Tiwari+4 more
wiley +1 more source
Controlling the helicity of magnetic skyrmions by electrical field in frustrated magnets
The skyrmions generated by frustration in centrosymmetric structures host extra internal degrees of freedom—vorticity and helicity, resulting in distinctive properties and potential functionality, which are not shared by the skyrmions stemming from the ...
Xiaoyan Yao, Jun Chen, Shuai Dong
doaj +1 more source