Results 131 to 140 of about 21,239 (224)
Residual Stresses and Micro‐voids Propel Metal Diffusion for Filament‐Based Memristors
Introducing non‐reactive nitrogen during silver sputtering enables low‐voltage (<60 mV) switching in memristors via nano‐void formation and residual stresses in the gigapascal range. This promotes sub‐micron filamentation and neuromorphic behaviors, including multi‐peak synaptic responses.
Joel Y.Y. Loh+8 more
wiley +1 more source
Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride. [PDF]
Lin F+11 more
europepmc +1 more source
Versatile and Robust Reservoir Computing with PWM‐Driven Heterogenous R–C Circuits
A robust physical reservoir computing (PRC) system using pulse‐width modulation (PWM)‐encoded R–C circuits is introduced. By enabling customizable nonlinearities and timescales, this system achieves state‐of‐the‐art accuracy in chaotic, multiscale, and multiclass tasks while maintaining stability across temperature variations and device batches.
Zelin Ma+9 more
wiley +1 more source
Publisher Correction: Reply to: On the giant deformation and ferroelectricity of guanidinium nitrate. [PDF]
Karothu DP+11 more
europepmc +1 more source
An inclusion co‐crystal strategy for elevating photothermal conversion efficiency is developed. A Tröger's base molecular box strongly bind two electron‐deficient TCNQ forming 1:2 ternary inclusion charge‐transfer co‐crystals, which displays a high photothermal efficiency of 94.3%.
Ruotong Wang+14 more
wiley +1 more source
Moiré ferroelectricity modulates light emission from a semiconductor monolayer. [PDF]
Kim DS+13 more
europepmc +1 more source
This study explores composition‐graded ScxAl1‐xN thin films grown by large‐scale and CMOS‐compatible sputtering that can effectively suppress abnormally‐oriented grains. Importantly, their ferroelectric properties can also be tuned owing to large built‐in fields induced by chemical/polarization gradient.
Tai Nguyen+11 more
wiley +1 more source
Enhanced Energy Storage Properties of the Relaxor and Antiferroelectric Crossover Ceramic Enabled by a High Entropy Design. [PDF]
Li Y+5 more
europepmc +1 more source
This study investigates the material and geometrically varying strain effects on HfO2 ferroelectric FETs (FeFETs). Through noise analysis, the reverse scaling effect is demonstrated due to the strain effects in the FeFET structure. This result indicates the importance of strain engineering in the FeFET for optimized performance.
Ryun‐Han Koo+10 more
wiley +1 more source
Ferroelectric HfO<sub>2</sub>-ZrO<sub>2</sub> Multilayers with Reduced Wake-Up. [PDF]
Mandal B+5 more
europepmc +1 more source