A radical salt undergoes a paraelastic‐ferroelastic phase transition, which is coupled with spin‐Peierls transition, resulting in it integrating self‐strain, spin bistability, switchable dielectric and high‐ properties. Abstract Materials that exhibit controllable changes in electrical, magnetic, or spontaneous strain properties, particularly those ...
Xuan‐Rong Chen+5 more
wiley +1 more source
Control of magnetic transitions via interlayer engineering in ferroelectric H<sub>2</sub>O-OH systems. [PDF]
Chen J+11 more
europepmc +1 more source
VOx‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter
Vanadium oxide‐based memristor devices achieve high performance for next‐generation non‐volatile memory and RF switches. These devices demonstrate a cutoff frequency of ≈4.5 THz, low insertion loss (<0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to 67 GHz.
Dabin Seo+6 more
wiley +1 more source
Epitaxial Ferroelectric Hexagonal Boron Nitride Grown on Graphene. [PDF]
Wong SS+17 more
europepmc +1 more source
Implementing Multimodal Hardware Security with 2D α‐In2Se3 Ferroelectric Transistor
A multimodal secure transistor‐integrated in‐memory sensing and computing architecture is demonstrated by leveraging its electronic and optoelectronic synaptic behaviors. Key security primitives, such as anticounterfeiting, watermarking, logic locking, and camouflaging, are implemented within a compact single‐transistor structure, providing a scalable ...
Xinwei Zhang+11 more
wiley +1 more source
The classical-to-quantum crossover in the strain-induced ferroelectric transition in SrTiO<sub>3</sub> membranes. [PDF]
Li J+9 more
europepmc +1 more source
Mixed‐Dimensional Floating Gate Phototransistors for Mixed‐Modal In‐Sensor Reservoir Computing
Designing bio‐inspired multisensory neuromorphic devices holds significant importance for low‐power and high‐efficiency computing. Here, the authors introduce a floating‐gate phototransistor based on the mixed‐dimensional heterostructure of 0D‐CsPbBr3 QDs and 2D‐MoS2 few layers.
Weilun Ouyang+9 more
wiley +1 more source
Temperature-Dependent {111}-Texture Transfer to Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films from {111}-Textured TiN Electrode and Its Impact on Ferroelectricity. [PDF]
Han DH+6 more
europepmc +1 more source
BaTiO3‐based polymorphic relaxor ferroelectrics are engineered by mesoscopically chemical homogeneity, constructing diversified nanodomain architectures with similar multiple local symmetries but different nanodomain scales in diverse grains. Ex‐/In situ multiscale structure analysis indicates that a relatively continuous polarization switching with ...
Aiwen Xie+10 more
wiley +1 more source
Solution-Processable Electronic-Grade 2D WTe<sub>2</sub> Enabled by Synergistic Dual Ammonium Intercalation. [PDF]
Yang H+13 more
europepmc +1 more source