Results 151 to 160 of about 86,597 (336)
On the critical behaviour of cubic ferroelectrics
, 1978 A. I. Sokolov, A. K. Tagantsev
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Advanced Science, EarlyView.The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui +6 more
wiley +1 more source
Cofiring Behavior of Ferroelectric Ferromagnetic Composites
, 2008 Xiwei Qi +4 more
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Effect of bias in ferroelectric-antiferroelectric relaxation [PDF]
, 2009 Morten Andreas Geday +5 more
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Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets
Advanced Science, EarlyView.The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao +6 more
wiley +1 more source
The study of the ferroelectric properties of lithium-titanium ferrite [PDF]
, 2015 А. В. Малышев +3 more
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Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
Advanced Science, EarlyView.α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
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