Results 171 to 180 of about 86,597 (336)

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source

Triggered Ferroelectricity in HfO₂ From Hybrid Phonons and Higher-Order Dynamical Charges. [PDF]

Adv Mater
Jung S, Birol T.
europepmc   +1 more source

Memristive Physical Reservoir Computing

Advanced Science, EarlyView.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Emergence of unconventional ferroelectric phase in ultrathin Hf_0.5Zr_0.5O₂ films. [PDF]

Sci Adv
Lee S, Lee H, Lee HH, Lee HK, Kim JH, Park S, Lee HJ, Bae H, Jo S, Hasan M, Ha Y, Kuh BJ, Heo J, Choe DH, Lee E.   +14 more
europepmc   +1 more source

A quarterly update on the happenings in the field of ferroelectricity

, 1999
The Ferroelectricity Newsletter intends to meet expectations by providing information about upcoming meetings worldwide, highlights of recently held conferences, lists of papers to be published in proceedings, reports on research, patents, and other ...

core  

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Strongly coupled interface ferroelectricity and interface superconductivity in amorphous LaAlO₃/KTaO₃(111). [PDF]

Nat Commun
Dong MD, Cheng XB, Zhang M, Wu J.
europepmc   +1 more source

Parameter identification in phase field models for ferroelectrics [PDF]

, 2009
D. Schrade, Ralf Müller, Dietmar Groß
openalex   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Back-end-of-line-compatible low-voltage operation in Hf_0.5 Zr_0.5O₂ ferroelectric film enabled by <i>in-situ</i> lanthanum doping. [PDF]

Natl Sci Rev
Liu Y, Xu K, Tang S, Zhu H, Chen L, Chen S, Liu W, Zhou P.   +7 more
europepmc   +1 more source