Results 191 to 200 of about 86,597 (336)

Reversible On/Off Switching of Ferroelectricity in a Molecular FeCo Prussian Blue Analogue with Multiple Control. [PDF]

open access: yesNat Commun
Huang YB   +11 more
europepmc   +1 more source

Local Polarization Unit Engineering Enables Ultrahigh Energy Density in NBT‐Based High‐Entropy Ceramic Capacitors

open access: yesAdvanced Science, EarlyView.
Herein, we demonstrate a breakthrough in dielectric energy storage by engineering local polarization units in high‐entropy multilayer ceramic capacitors (MLCCs). The optimized MLCCs achieve an ultrahigh recoverable energy density of 18.2 J cm−3 with 91% efficiency, coupled with exceptional thermal stability and fatigue resistance.
Shiyu Zhou   +11 more
wiley   +1 more source

Structural Transition in Few-Layer Group-IV Monochalcogenides Induced by Mechanical Forces. [PDF]

open access: yesACS Omega
Moqbel R   +6 more
europepmc   +1 more source

Ferroelectric switching dynamics of topological vortex domains in a hexagonal manganite [PDF]

open access: green, 2013
Myung‐Geun Han   +8 more
openalex   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

open access: yesAdvanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

open access: yesAdvanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave   +14 more
wiley   +1 more source

Robust room-temperature ferroelectricity in the wide-bandgap semiconductor Ga<sub>2</sub>O<sub>3</sub>. [PDF]

open access: yesSci Adv
Shen J   +14 more
europepmc   +1 more source

Asymmetrically Fluorinated Phenyl 4‐biphenylcarboxylate Motifs as a Design Principle for Enantiotropic Ferroelectric Liquid Crystals

open access: yesAdvanced Science, EarlyView.
The effect of the structural arrangement of DIO and its analogs on ferroelectric phases is explored. Consequently, it is found that an asymmetrically fluorinated phenyl 4‐biphenylcaroboxylate skeleton is one of the favorable structural motifs for the emergence of enantiotropic ferroelectric liquid crystal phases.
Hiroyuki Matsukizono   +4 more
wiley   +1 more source

Templated perpendicular ferroelectricity in textured Aurivillius oxide-based thin films. [PDF]

open access: yesNat Commun
Zhou S   +13 more
europepmc   +1 more source

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