Results 211 to 220 of about 200,353 (320)

Atomic‐Scale Mechanisms of Nucleation and Stabilization in CuCrO2 and CuFeO2 Delafossite Thin Films on Al2O3

open access: yesAdvanced Materials Interfaces, EarlyView.
In this work, a combination of 4D STEM phase reconstructions via iterative electron ptychography, spectroscopy, and conventional STEM imaging reveals detailed insights into the nucleation mechanism for the stable growth of Cu‐based delafossites on Al2O3 using CuCrO2 and CuFeO2 films grown via MBE as examples.
Anna Scheid   +7 more
wiley   +1 more source

Phase Engineering for Enhanced Piezoresponse in P(VDF‐TrFE) and Its Composites

open access: yesAdvanced Materials Interfaces, EarlyView.
As the temperature approaches the Curie point, the crystalline phase in P(VDF‐TrFE) decreases proportionally, while the amorphous phase increases. This shift leads to the formation of more interphase regions. Although spontaneous polarization from crystalline regions decreases, the interphase regions enable additional deformation, thereby enhancing the
Soyun Joo   +3 more
wiley   +1 more source

Efficient and Realistic Brain Simulation: A Review and Design Guide for Memristor‐Based Approaches

open access: yesAdvanced Materials Technologies, EarlyView.
Memristor‐based emulation of Hodgkin‐Huxley neuron models is investigated, by defining the ideal device characteristics needed for accurate ion‐channel representation and reviewing existing works targeting memristive replication of biological realistic neural behavior.
Lennart Paul Liong Landsmeer   +5 more
wiley   +1 more source

Photoactive Monolayer MoS2 for Spiking Neural Networks Enabled Machine Vision Applications

open access: yesAdvanced Materials Technologies, EarlyView.
Molybdenum disulfide (MoS2) optoelectronic devices are implemented as Leaky Integrate‐and‐Fire (LIF) neurons in spiking neural networks (SNNs), where light‐induced photocurrent dynamics represent potentiation (τd) and depression (τd), emulating neuronal membrane potential.
Thiha Aung   +5 more
wiley   +1 more source

Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films

open access: yesAdvanced Materials Technologies, EarlyView.
This study showcases the first‐ever demonstration of ovonic threshold switching (OTS) and resistive switching (RS) in ZnTe thin films fabricated via a fast, cost‐effective electrodeposition method. By controlling the deposition potential, ZnTe film is tuned to demonstrate OTS or RS behaviors, enabling the implementation of one‐selector‐one‐resistor ...
Ayoub H. Jaafar   +8 more
wiley   +1 more source

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