Results 281 to 290 of about 200,353 (320)

All‐Electric Mimicking of Synaptic Plasticity Based on the Noncollinear Antiferromagnetic Device

Advanced Electronic Materials, EarlyView.
Mn3Pt was chosen as spin source with a simple face‐centered cubic structure and a noncollinear antiferromagnetic configuration to build a spin‐orbit torque (SOT) device that mimics all‐electric synaptic behavior for developing neuromorphic computing.
Cuimei Cao, Wei Duan, Xiaoyu Feng, Yan Xu, Yihan Wang, Zhenzhong Yang, Qingfeng Zhan, Long You   +7 more
wiley   +1 more source

Exploring the Bioengineering Potential of CoFe2O4‐BaTiO3 Nanoparticles: A Dive into the Magnetoelectric Coefficient

Advanced Electronic Materials, EarlyView.
Magnetoelectric (ME) core–shell nanoparticles, particularly made of CoFe2O4‐BaTiO3, are emerging as promising materials for bioengineering applications. This perspective explores the evolution of measurement methodologies for their ME coefficient (α), highlighting variations in reported values.
Martina Lenzuni, Alessandra Marrella, Emma Chiaramello, Giulia Suarato, Paolo Ravazzani   +4 more
wiley   +1 more source

X-RAY POWDER DIFFRACTION STUDY OF MIXED BISMUTH OXIDE FERROELECTRICS WITH LAYER TYPE STRUCTURE PbBi₄Ti₄O₁₅ AND SrBi₄Ti₄O₁₅

, 1980
GUO CHANG-LIN, WU YU-QIN
openalex   +1 more source

Quantum Transport in SnTe Nanowire Devices

Advanced Electronic Materials, EarlyView.
A variety of quantum transport experiments are observed in SnTe nanowire devices and attributed to microscopic differences in the fabrication. Three categories can be distinguished: semiconducting behavior, partial superconductivity and Fabry‐Pérot oscillations.
Femke J. Witmans, Mathijs G. C. Mientjes, Maarten J. G. Kamphuis, Vince van de Sande, Xin Guan, Hans Bolten, Marcel A. Verheijen, Chuan Li, Joost Ridderbos, Erik P.A.M. Bakkers, Alexander Brinkman, Floris A. Zwanenburg   +11 more
wiley   +1 more source

Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport

Advanced Electronic Materials, EarlyView.
This paper presents a dual‐layer device integrating neuronal and synaptic functions using a conductive bottom layer (MXenes or rGO) and a gallium oxide top layer. The device demonstrates distinct switching behaviors—volatile (neuronal) and gradual (synaptic)—depending on the configuration.
Suji Ha, YoungJu Park, Chanjin Lim, Eunyeong Yang, Taegil Kim, Seon Joon Kim, Junwoo Park   +6 more
wiley   +1 more source

Impact of Al/Ti Electrodes on the Performance and Operational Stability of n‐Channel Solution‐Processed Solid‐State Electrolyte‐Gated Transistors: Applications in Reservoir Computing

Advanced Electronic Materials, EarlyView.
The Al/Ti electrode demonstrates superior n‐channel performance and enhanced operational stability in diketopyrrolopyrrole (DPP)‐based organic electrolyte‐gated transistors (OEGTs) compared to conventional Au electrodes. A systematic investigation of polymer insulators and solid electrolyte gate dielectrics reveals electrode‐dependent contact ...
Quanhua Chen, Xiang Wan, Walid Boukhili, Jie Yan, Hong Zhu, Lijian Chen, Chee Leong Tan, Zhihao Yu, Huabin Sun, Yong Xu, Dongyoon Khim   +10 more
wiley   +1 more source

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

Advanced Electronic Materials, EarlyView.
High‐k dielectrics are in great demand for developing organic transistors operating at low voltages. However, the actual influence of high‐k dielectrics has been ambiguous. This work clarifies the correlation of dielectric constant and mobility through highly miscible high‐k polymer blends and provides a rational strategy on designing high‐performance ...
Beomjin Jeong, Kamal Asadi
wiley   +1 more source

The Platform to Characterizing the Thermoelectric Materials by Photo‐Crosslinked Ionic Gel Electrolyte

Advanced Electronic Materials, EarlyView.
The device platform, which utilizes a photo‐crosslinked ionic gel electrolyte with a broad range of oxidation and reduction capabilities, can effectively evaluate and screen the thermoelectric material candidates with high potential across a wide range of doping levels, thereby minimizing the effort required to identify dopants compatible with ...
Sunbin Hwang, Mutsunori Uenuma, Junya Kurumida   +2 more
wiley   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

Advanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang, Xuemeng Hu, Baifan Qian, Jiajie Yu, Zhenhai Li, Qingqing Sun, David Wei Zhang, Qingxuan Li, Lin Chen   +8 more
wiley   +1 more source

Memory Manufacture Under Microgravity (MMuM): In‐Space Manufactured ZnO‐Based Resistive Random Access Memory for Emerging Computing Application

Advanced Electronic Materials, EarlyView.
This paper presented ZnO‐based crossbar RRAMs by electrohydrodynamic (EHD) printing technology under in‐space manufacture environment as microgravity (µG). The crossbar structures of Ag/ZnO/Ag are fabricated under earth with in‐space microgravity. With the microgravity effect, a significant electroforming forming voltage reduced 89.3% as a storage ...
Yujian Huang, Liangkui Jiang, Matthew Marander, Sai Prakash Maddineni, Hantang Qin, Shan Jiang, Curtis W. Hill, Myeong‐Lok Seol, Ying‐Chen Daphne Chen   +8 more
wiley   +1 more source