Results 261 to 270 of about 86,597 (336)

Precise structure and polarization determination of Hf_0.5Zr_0.5O₂ with electron ptychography. [PDF]

Nat Commun
Gao X, Liu Z, Han B, Zhang X, Mao R, Shi R, Zhu R, Lu J, Wang T, Jin K, Li J, Ge C, Gao P.   +12 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Ferroelectric Properties of Bilayer MoS₂/WS₂ Heterostructure Modulated by Twist Angle. [PDF]

Adv Sci (Weinh)
Wang L, Xia Z, Sun X, Xu S, Sun G, Zheng Y, Zhan Z, Li E, Cai S, Zhang Y, Zhao J, Li W, Yuan S.   +12 more
europepmc   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Direct observation of cation-dependent polarisation switching dynamics in fluorite ferroelectrics. [PDF]

Nat Commun
Ooe K, Shen Y, Shitara K, Maki R, Kobayashi S, Shimakawa Y, Kan D, Etheridge J.   +7 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

High Open-Circuit Voltage-Fill factor product in perovskite solar cells enabled by ferroelectric heterojunction modulation. [PDF]

Nat Commun
Wu N, Ni H, Niu T, Yang T, Qin R, Wang C, Chang X, Lang L, Wang S, Zhao D, Tian C, Zhao E, Zhao C, Liu SF, Zhang Y, Zhao K.   +15 more
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

A stable monoclinic variant and resultant robust ferroelectricity in single-crystalline hafnia-based films. [PDF]

Nat Commun
Geng WR, Wang YJ, Zhu YL, Zhang S, Ma H, Tang YL, Tuo S, Ma XL.   +7 more
europepmc   +1 more source

Ferroelectrics

Journal of the Mineralogical Society of Japan, 1980
openaire   +2 more sources