Nonvolatile electrical switching of nonreciprocal transport in ferroelectric polar metal WTe<sub>2</sub>. [PDF]
Wang R +12 more
europepmc +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Water-Assisted Exfoliation of HfO<sub>2</sub>-Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors. [PDF]
Zhang H +13 more
europepmc +1 more source
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Sliding ferroelectric metal with ferrimagnetism. [PDF]
Guo Z +5 more
europepmc +1 more source
Nonlinear Transverse Transport in a Ferromagnetic Polar Metal
This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha +13 more
wiley +1 more source
Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R-MoS<sub>2</sub> for Polarization-Dependent Reconfigurable Optoelectronic Synapses. [PDF]
Xue Q +11 more
europepmc +1 more source
Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley +1 more source
Quantum Phase Transitions in Graphene Coupled to a Twisted WSe<sub>2</sub> Moiré Ferroelectricity. [PDF]
Singh B +17 more
europepmc +1 more source

