Results 241 to 250 of about 86,597 (336)

Nonvolatile electrical switching of nonreciprocal transport in ferroelectric polar metal WTe<sub>2</sub>. [PDF]

open access: yesNat Commun
Wang R   +12 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

Water-Assisted Exfoliation of HfO<sub>2</sub>-Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors. [PDF]

open access: yesAdv Sci (Weinh)
Zhang H   +13 more
europepmc   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

open access: yesAdvanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Sliding ferroelectric metal with ferrimagnetism. [PDF]

open access: yesNat Commun
Guo Z   +5 more
europepmc   +1 more source

Nonlinear Transverse Transport in a Ferromagnetic Polar Metal

open access: yesAdvanced Electronic Materials, EarlyView.
This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha   +13 more
wiley   +1 more source

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R-MoS<sub>2</sub> for Polarization-Dependent Reconfigurable Optoelectronic Synapses. [PDF]

open access: yesAdv Sci (Weinh)
Xue Q   +11 more
europepmc   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

open access: yesAdvanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Quantum Phase Transitions in Graphene Coupled to a Twisted WSe<sub>2</sub> Moiré Ferroelectricity. [PDF]

open access: yesAdv Mater
Singh B   +17 more
europepmc   +1 more source

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