Results 251 to 260 of about 86,597 (336)

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Approaching theoretical polarization limit in HfZrO2/HfLaO2 multilayers. [PDF]

Nat Commun
Shi S, Xi H, Su H, Sawyerr F, Liu Z, Zhang Z, Huangfu G, Niu J, Sun Y, Yang P, Gong X, Chen W, Tsymbal EY, Yan X, Tian H, Cao T, Chen J.   +16 more
europepmc   +1 more source

Structural Phase Transition in LiNbO₃-type Ferroelectrics Studied by Synchrotron Radiation X-ray Diffraction

, 2019
Zhigang Zhang
openalex   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Coexistence of ferroelectricity and altermagnetism in wurtzite vanadium oxide: a first-principles study. [PDF]

RSC Adv
Zaman A, Alrefaee SH, Shahid H, Orlova T, Alrubayyi A, Alreshidi R, Tirth V, Algahtani A.   +7 more
europepmc   +1 more source

Temperature‐Graded Deposition of HfZrOx for Ferroelectric Capacitors With Enhanced Polarization, Reliability, and Switching

Advanced Electronic Materials, EarlyView.
Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng, Yin‐Chen Sun, Yu‐Cheng Kao, Hsin‐Yu Hsu, Pin‐Jiun Wu, Yung‐Hsien Wu   +5 more
wiley   +1 more source

Lone pair localization governs ferroelectric stability and excitonic properties in lead free halide perovskites. [PDF]

Sci Rep
Rahimi S, Jalali-Asadabadi S.
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

A-site dependent metastable polar phases from polarization compatible octahedral rotations in perovskite AZrO₃ (A = Ca, Sr). [PDF]

Sci Rep
Choi MC, Park SY.
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source