Results 21 to 30 of about 22,991 (219)

Mechanisms and origin of multiferroicity [PDF]

, 2015
Motivated by the potential applications of their intrinsic cross-coupling properties, the interest in multiferroic materials has constantly increased recently, leading to significant experimental and theoretical advancements.
Barone, Paolo, Picozzi, Silvia
core   +2 more sources

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

Advanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki, In Cheol Kwak, Seonkwon Kim, Jihyun Kim, Dong Gue Roe, Se‐Jin Kim, Joohoon Kang, Jeong Ho Cho   +7 more
wiley   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

Advanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker, Yoonsang Park, Kihong Kim, Ji Soo Kim, Nives Strkalj, Atif Jan, Giuliana Di Martino, Benson K. Tsai, Haiyan Wang, Ping Lu, Duk‐Hyun Choe, Judith L. MacManus‐Driscoll   +11 more
wiley   +1 more source

Advances in ab-initio theory of Multiferroics. Materials and mechanisms: modelling and understanding

, 2012
Within the broad class of multiferroics (compounds showing a coexistence of magnetism and ferroelectricity), we focus on the subclass of "improper electronic ferroelectrics", i.e.
A. Girlando, A. Malashevic, A. Rohrbach, A. Savin, A. Seidl, A. Stroppa, A. Stroppa, A. Stroppa, A. Stroppa, A. Stroppa, A.D. Becke, A.K. Cheetham, A.K. Kirov, A.P. Kuzmenko, A.P. Levanyuk, A.V. Kimel, B. Lorenz, B.J. Campbell, C. Adamo, C. Capillas, C. Capillas, C. Capillas, C. Ederer, C. Ederer, C. Loschen, C.N.R. Rao, D. Baldomir, D. Khomskii, D. Orobengoa, D. Vanderbilt, D.I. Khomskii, D.V. Efremov, E. Bousquet, E. Bousquet, E. Kroumova, E. Kroumova, E. Kroumova, E. Kroumova, E.J.W. Verwey, E.M. Wheeler, F. Hong, F. Kagawa, F. Kagawa, F. Kubel, F. Nad, G. Férey, G. Férey, G. Giovannetti, G. Giovannetti, G. Giovannetti, G. Giovannetti, G. Giovannetti, G. King, G. King, G. King, G. King, G. King, G. Kresse, G. Kresse, G. Kresse, G. Lawes, G. Rogez, G.P. Vorobev, H. Katsura, H. Okamoto, H. Schmidt, H. Tsunetsugu, H. Wu, H.F. Clausen, I.A. Sergienko, I.A. Sergienko, I.B. Bersuker, I.J. Dzialoshinski, I.V. Solovyev, J. Adhish, J. Brink van den, J. Hemberger, J. Heyd, J. Heyd, J. Hong, J. Kanamori, J. Lopez-Prez, J. Paier, J. Valasek, J. Wang, J.A. Alonso, J.B. Goodenough, J.B. Torrance, J.B. Torrance, J.F. Scott, J.H. Lee, J.L. Garcia-Munoz, J.M. Perez-Mato, J.M. Perez-Mato, J.M. Perez-Mato, J.M. Rondinelli, J.M. Rondinelli, J.M. Rondinelli, J.M. Rondinelli, J.P. Perdew, K. Yamauchi, K. Yamauchi, K. Yamauchi, K. Yamauchi, K.-L. Hu, K.-L. Hu, K.I. Kugel, L. Holmes, L. Neel, L. Noodleman, L. Noodleman, L. Noodleman, L. Noodleman, L.C. Chapon, M. Alexe, M. Belakhovsky, M. Cointe Le, M. Dressel, M. Filatov, M. Marsman, M. Matsubara, M. Mostovoy, M. Reehuis, M.A. black, M.I. Aroyo, M.I. Aroyo, M.J. Rosseinsky, M.T. Fernandez-Diaz, M.W. Licurse, N. Keller, N.A. Benedek, N.A. Benedek, N.A. Hill, N.A. Spaldin, N.B. Perkins, N.J. Mosey, O. Tchernyshyov, O.M. Yaghi, P. Barone, P. García, P. Ghosez, P. Hohenberg, P. Jain, P.E. Blochl, P.J. Hay, P.J. Stephens, P.W. Anderson, P.W. Anderson, P.W. Anderson, R. Ramesh, R. Ramesh, R. Resta, R. Valdes-Aguilar, R. Wojciechowski, R.D. King-Smith, R.E. Cohen, R.L. Withers, S. Blanco-Canosa, S. Garcia-Martin, S. Garcia-Martin, S. Horiuchi, S. Horiuchi, S. Horiuchi, S. Horiuchi, S. Ishibashi, S. Ishiwata, S. Ivantchev, S. Ivantchev, S. Kummel, S. Picozzi, S. Picozzi, S. Picozzi, S. Valencia, S. Weber, S.C. Parida, S.J. Luo, S.L. Gnatchenko, S.W. Cheong, T. Fukushima, T. Fukushima, T. Fukushima, T. Hoffmann, T. Kimura, T. Kurumaji, T. Moriya, T. Smith, T. Zhao, T.-Y. Khim, V. Pardo, V.I. Anisimov, V.I. Anisimov, V.Y. Pomjakushin, W. Dachraoui, W. Kohn, X.-Y. Wang, Y. Du, Y. Miyamoto, Y. Nakatsuka, Y. Okimoto, Y. Takano, Y. Tokunaga, Y. Tokunaga, Y. Tokura, Y. Yamasaki, Z.G. Soos   +204 more
core   +1 more source

Coexisting Rashba/Dresselhaus Spin Splitting in Solution‐Processed Bournonite Films Using Circular Photogalvanic Effect

Advanced Functional Materials, EarlyView.
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell, Sasa Wang, Andrew Grieder, Yuan Ping, David B. Mitzi, Dali Sun   +5 more
wiley   +1 more source

Ferroelectricity at ferroelectric domain walls

, 2013
10 pages with 6 figures embedded. Includes Suppl. Mats.
Wojdel, Jacek C., Iniguez, Jorge
openaire   +2 more sources

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

Advanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter, Valerio Piazza, Pramod Ghimire, Anna Fontcuberta i Morral, Eli Sutter   +4 more
wiley   +1 more source

Electromagnon excitations in modulated multiferroics

, 2008
The phenomenological theory of ferroelectricity in spiral magnets presented in [M. Mostovoy, Phys. Rev. Lett. 96, 067601 (2006)] is generalized to describe consistently states with both uniform and modulated-in-space ferroelectric polarizations.
A. Cano, A. P. Levanyuk, B. A. Strukov, E. I. Kats, G. A. Smolenskiĭ, H. Schmid, I. E. Dzyaloshinskii, I. E. Dzyaloshinskii, I. E. Dzyaloshinskii, I. E. Dzyaloshinskii, L. D. Landau, P. G. de Gennes, V. G. Bar’yakhtar, V. G. Bar’yakhtar, V. G. Bar’yakhtar, Y. N. Venevtsev, Yu. A. Izyumov   +16 more
core   +1 more source

Ferroelectric Switchable Altermagnetism

Physical Review Letters
7 pages, 4 ...
Mingqiang Gu, Yuntian Liu, Haiyuan Zhu, Kunihiro Yananose, Xiaobing Chen, Yongkang Hu, Alessandro Stroppa, Qihang Liu   +7 more
openaire   +3 more sources