Results 41 to 50 of about 86,597 (336)
Ferroelectricity in Simple Binary Crystals
The origin of ferroelectricity in doped binary crystals, Pb1−xGexTe, Cd1−xZnxTe, Zn1−xLixO, and Hf1−xZrxO2 is discussed, while no binary ferroelectrics have been reported except for two crystals, HCl and HBr. The ferroelectricity is induced only in doped
Akira Onodera, Masaki Takesada
doaj +1 more source
On the Physics of Ferroelectrics
The main physical properties of ferroelectric crystals are described, and the macroscopic and microscopic viewpoints are discussed along with some applications, such as in capacitors and nonlinear optics. The emphasis is on physical understanding, while the mathematical level is kept to a minimum or supplemented by graphical representations to make the
openaire +2 more sources
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge +8 more
wiley +1 more source
A quarterly update on what's happening in the field of ferroelectricity [PDF]
The Ferroelectricity Newsletter intends to meet expectations by providing information about upcoming meetings worldwide, highlights of recently held conferences, lists of papers to be published in proceedings, reports on research, patents, and other ...
core +6 more sources
A quarterly update on what's happening in the field of ferroelectricity [PDF]
The Ferroelectricity Newsletter intends to meet expectations by providing information about upcoming meetings worldwide, highlights of recently held conferences, lists of papers to be published in proceedings, reports on research, patents, and other ...
core +2 more sources
Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
It is difficult to maintain ferroelectricity in the two dimensional limit. Here, the authors report robust room-temperature ferroelectricity in the thinnest monolayer MoTe2 due to relative atomic displacements of Mo and Te atoms.
Shuoguo Yuan +6 more
doaj +1 more source
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol +5 more
wiley +1 more source
A quarterly update on what's happening in the field of ferroelectricity [PDF]
The Ferroelectricity Newsletter intends to meet expectations by providing information about upcoming meetings worldwide, highlights of recently held conferences, lists of papers to be published in proceedings, reports on research, patents, and other ...
core +4 more sources
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Ferroelectricity in Antiferromagnetic Wurtzite Nitrides
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa +3 more
wiley +1 more source

