Results 51 to 60 of about 24,071 (183)

Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Electronic Materials, 2023
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini, Benoît Manchon, Ingrid Cañero Infante, Matthieu Bugnet, Rabei Barhoumi, Shruti Nirantar, Edwin Mayes, Pedro Rojo Romeo, Nicholas Blanchard, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin   +11 more
doaj   +1 more source

An Effective Model of Magnetoelectricity in Multiferroics $RMn_2O_5$

, 2007
An effective model is developed to explain the phase diagram and the mechanism of magnetoelectric coupling in multiferroics, $RMn_2O_5$. We show that the nature of magnetoelectric coupling in $RMn_2O_5$ is a coupling between two Ising-type orders, namely,
Bak P., Chen Fang, Fang C. Hu J., Harris A. B., Jangping Hu, Radulov I. Lovchinov V. Daszkiewicz M., Shender E. F., Tsvelik A. M.   +7 more
core   +1 more source

Thin‐Film Ferroelectrics

Advanced Materials, 2022
AbstractOver the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities.
Abel Fernandez, Megha Acharya, Han‐Gyeol Lee, Jesse Schimpf, Yizhe Jiang, Djamila Lou, Zishen Tian, Lane W. Martin   +7 more
openaire   +4 more sources

Ferroelectricity induced by spin-dependent metal-ligand hybridization in Ba$_2$CoGe$_2$O$_7$

, 2010
We have investigated the variation of induced ferroelectric polarization under magnetic field with various directions and magnitudes in a staggered antiferromagnet Ba$_2$CoGe$_2$O$_7$.
Furukawa, N., Miyahara, S., Murakawa, H., Onose, Y., Tokura, Y.   +4 more
core   +1 more source

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Advanced Electronic Materials, 2023
The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging.
Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim   +8 more
doaj   +1 more source

Collinear-to-Spiral Spin Transformation without Changing Modulation Wavelength upon Ferroelectric Transition in Tb1-xDyxMnO3

, 2006
Lattice modulation and magnetic structures in magnetoelectric compounds Tb1-xDyxMnO3 have been studied around the ferroelectric (FE) Curie temperature T_C by x-ray and neutron diffraction.
A. Tokunaga, A. M. Kadomtseva, H. Kimura, T. Arima, T. Goto, Y. Noda, Y. Noda, Y. Tokura   +7 more
core   +1 more source

Impurity-doping induced ferroelectricity in frustrated antiferromagnet CuFeO2

, 2006
Dielectric responses have been investigated on the triangular-lattice antiferromagnet CuFeO2 and its site-diluted analogs CuFe1-xAlxO2 (x=0.01 and 0.02) with and without application of magnetic field.
Iguchi, S., Onose, Y., Seki, S., Shiomi, Y., Tokura, Y., Yamasaki, Y.   +5 more
core   +1 more source

Recipes for improper ferroelectricity in molecular perovskites

Nature Communications, 2018
In layered inorganic materials lattice distortions can couple to break inversion symmetry and drive improper ferroelectricity, but in perovskites, symmetry prohibits such an effect.
Hanna L. B. Boström, Mark S. Senn, Andrew L. Goodwin   +2 more
doaj   +1 more source

Recent progress in first-principles studies of magnetoelectric multiferroics

, 2005
Materials that combine magnetic and ferroelectric properties have generated increasing interest over the last few years, due to both their diverse properties and their potential utility in new types of magnetoelectric device applications.
Anderson, Anisimov, Anisimov, Baettig, Baettig, Bai, Bokov, Bungaro, Choi, Claude Ederer, Cohen, Cohen, dos Santos, dos Santos, Ederer, Ederer, Ederer, Eerenstein, Fennie, Fennie, Fiebig, Fiebig, Filippetti, Filippetti, Filippetti, Fischer, Ghosez, Goodenough, Haeni, Hemberger, Hill, Hill, Hill, Hill, Hill, Hur, Jones, Kimura, Kimura, King-Smith, Kiselev, Li, Lottermoser, Martin, Medvedeva, Moriya, Neaton, Neaton, Nicola A. Spaldin, Niitaka, Palkar, Perdew, Qi, Qian, Resta, Schmid, Schmid, Schmid, Seshadri, Shishidou, Skinner, Smolenskii, Solovyev, Sosnowska, Spaldin, Sugawara, Teague, Terakura, Ueda, Ueda, van Aken, van Aken, Vanderbilt, Wang, Wang, Xu, Yakel, Yun, Zheng   +78 more
core   +1 more source

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Nature Communications, 2018
High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two ...
H. Wang, Z. R. Liu, H. Y. Yoong, T. R. Paudel, J. X. Xiao, R. Guo, W. N. Lin, P. Yang, J. Wang, G. M. Chow, T. Venkatesan, E. Y. Tsymbal, H. Tian, J. S. Chen   +13 more
doaj   +1 more source