Results 71 to 80 of about 10,723 (186)

Structural transformation and charge transfer induced ferroelectricity and magnetism in annealed YMnO3

AIP Advances, 2011
Multiferroic materials such as YMnO3, which uniquely exhibit ferroelectricity and magnetism simultaneously, have been extensively studied for spintronic device applications. However, the origin of multiferroicity remains poorly understood. In this study,
Sheng-Hsu Liu, Jung-Chun-Andrew Huang, Xiaoding Qi, Wei-Jui Lin, Yu-Jhan Siao, Chun-Rong Lin, Jin-Ming Chen, Mau-Tsu Tang, Yu-Hua Lee, Jung-Chuan Lee   +9 more
doaj   +1 more source

Ferroelectric Switchable Altermagnetism

Physical Review Letters
7 pages, 4 ...
Mingqiang Gu, Yuntian Liu, Haiyuan Zhu, Kunihiro Yananose, Xiaobing Chen, Yongkang Hu, Alessandro Stroppa, Qihang Liu   +7 more
openaire   +3 more sources

Thermodynamic Theory of Proximity Ferroelectricity

Physical Review X
Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a nonferroelectric polar material becomes a ferroelectric one by interfacing with a thin ferroelectric layer.
Eugene A. Eliseev, Anna N. Morozovska, Jon-Paul Maria, Long-Qing Chen, Venkatraman Gopalan   +4 more
doaj   +1 more source

A quarterly update on what's happening in the field of ferroelectricity [PDF]

, 1998
The Ferroelectricity Newsletter intends to meet expectations by providing information about upcoming meetings worldwide, highlights of recently held conferences, lists of papers to be published in proceedings, reports on research, patents, and other ...

core   +3 more sources

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO₂ Deposited by RF Plasma Sputter

Nanomaterials
In this study, the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO2) was analyzed. Hafnium oxide was deposited on various substrates such as platinum, titanium nitride, and silicon (Pt, TiN, Si) through ...
Seokwon Lim, Yeonghwan Ahn, Beomho Won, Suwan Lee, Hayoung Park, Mohit Kumar, Hyungtak Seo   +6 more
doaj   +1 more source

Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets

Advanced Science, 2019
Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics.
Yejing Dai, Changsheng Wu, Zhiyi Wu, Zhihao Zhao, Li Li, Yang Lu, Zhong Lin Wang   +6 more
doaj   +1 more source

Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics

IEEE Electron Device Letters
This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics.
Ruiqing Wang, Jiuren Zhou, Siying Zheng, Feng Zhu, Wenxin Sun, Haiwen Xu, Bochang Li, Yan Liu, Yue Hao, Genquan Han   +9 more
openaire   +2 more sources

A quarterly update of what's happening in the field of ferroelectricity [PDF]

, 2002
The Ferroelectricity Newsletter intends to meet expectations by providing information about upcoming meetings worldwide, highlights of recently held conferences, lists of papers to be published in proceedings, reports on research, patents, and other ...

core  

Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer

Advanced Electronic Materials
Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes.
Kuan Liu, Kai Liu, Xingchang Zhang, Feng Jin, Jie Fang, Enda Hua, Huan Ye, Jinfeng Zhang, Zhengguo Liang, Qiming Lv, Wenbin Wu, Chao Ma, Lingfei Wang   +12 more
doaj   +1 more source

Breaking the synchrony of sliding ferroelectricity and sliding energy barrier

npj Computational Materials
Two-dimensional (2D) materials demonstrate exceptional sliding ferroelectricity, owing to their facilitated interface charge transfer and controllable interlayer sliding.
Qihao Liang, Huasong Qin, Yilun Liu
doaj   +1 more source