Results 71 to 80 of about 24,071 (183)

Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

, 2017
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A., Conrad, Nathan J., Jiang, Chunsheng, Maize, Kerry D., Qiu, Gang, Shakouri, Ali, Si, Mengwei, Su, Chun-Jung, Wu, Chien-Ting, Ye, Peide D., Zhou, Hong   +10 more
core   +1 more source

Interplay between charge-order, ferroelectricity and ferroelasticity: tungsten bronze structures as a playground for multiferroicity

, 2009
Large electron-electron Coulomb-interactions in correlated systems can lead to a periodic arrangement of localized electrons, the so called "charge-order".
Picozzi, Silvia, Yamauchi, Kunihiko
core   +1 more source

Structural transformation and charge transfer induced ferroelectricity and magnetism in annealed YMnO3

AIP Advances, 2011
Multiferroic materials such as YMnO3, which uniquely exhibit ferroelectricity and magnetism simultaneously, have been extensively studied for spintronic device applications. However, the origin of multiferroicity remains poorly understood. In this study,
Sheng-Hsu Liu, Jung-Chun-Andrew Huang, Xiaoding Qi, Wei-Jui Lin, Yu-Jhan Siao, Chun-Rong Lin, Jin-Ming Chen, Mau-Tsu Tang, Yu-Hua Lee, Jung-Chuan Lee   +9 more
doaj   +1 more source

Thermodynamic Theory of Proximity Ferroelectricity

Physical Review X
Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a nonferroelectric polar material becomes a ferroelectric one by interfacing with a thin ferroelectric layer.
Eugene A. Eliseev, Anna N. Morozovska, Jon-Paul Maria, Long-Qing Chen, Venkatraman Gopalan   +4 more
doaj   +1 more source

Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets

Advanced Science, 2019
Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics.
Yejing Dai, Changsheng Wu, Zhiyi Wu, Zhihao Zhao, Li Li, Yang Lu, Zhong Lin Wang   +6 more
doaj   +1 more source

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO₂ Deposited by RF Plasma Sputter

Nanomaterials
In this study, the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO2) was analyzed. Hafnium oxide was deposited on various substrates such as platinum, titanium nitride, and silicon (Pt, TiN, Si) through ...
Seokwon Lim, Yeonghwan Ahn, Beomho Won, Suwan Lee, Hayoung Park, Mohit Kumar, Hyungtak Seo   +6 more
doaj   +1 more source

Vortex ferroelectric domains

Journal of Physics: Condensed Matter, 2008
We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors.
Gruverman, Alexei, Wu, D., Fan, H.-J., Vrejoiu, I., Alexe, M., Harrison, R. J., Scott, J. F.   +6 more
openaire   +3 more sources

Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer

Advanced Electronic Materials
Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes.
Kuan Liu, Kai Liu, Xingchang Zhang, Feng Jin, Jie Fang, Enda Hua, Huan Ye, Jinfeng Zhang, Zhengguo Liang, Qiming Lv, Wenbin Wu, Chao Ma, Lingfei Wang   +12 more
doaj   +1 more source

Calculation of the Spontaneous Polarization and the Dielectric Constant for the Ferroelectric N(CH3)4HSO4 Using the Mean Field Model

High Temperature Materials and Processes, 2017
The temperature dependences of the spontaneous polarization and the dielectric constant (susceptibility) are calculated using the mean field model for the ferroelectric N(CH3)4HSO4.
Yurtseven H., Celik M., Karacali H.
doaj   +1 more source

Chiral Mesostructure‐Induced Ferroelectricity and Photoelectric Chiral Anisotropy of MnWO4

Small Structures
Creating ferroelectricity in centrosymmetric and paramagnetic materials through nanostructures presents a challenge in materials science due to their high symmetry and paired spins.
Jianwei Zuo, Quanzheng Deng, Lu Han, Shunai Che, Yingying Duan   +4 more
doaj   +1 more source